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ABSOLUTE MAXIMUM RATINGS

(1)

RECOMMENDED OPERATING CONDITIONS

ELECTRICAL CHARACTERISTICS

UCD9080

SLVS692A – SEPTEMBER 2006 – REVISED DECEMBER 2006

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION

MSOP SYMBOL

UCD9080RHBR

–40

°C to 85°C

RHB

UCD9080RHBT

(1)

The package is available taped and reeled. Add the R suffix for reeled quantities. Add the T suffix for

taped quantities.

(2)

For the most current package and ordering information, see the Package Option Addendum at the end

of this document, or see the TI Web site at www.ti.com.

VALUE

UNIT

Voltage applied at VCC to VSS

–0.3 to 4.1

V

V

Diode current at any device terminal

±2

mA

Storage temperature

–40 to 85

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

MIN

NOM

MAX

UNIT

Supply voltage during operation

3

3.3

3.6

V

Supply during configuration changes

3

3.3

3.6

Operating free-air temperature range

–40

85

°C

These specifications are over recommended ranges of supply voltage and operating free-air temperature, unless otherwise

noted

PARAMETER

TEST CONDITIONS

MIN

NOM

MAX

UNIT

SUPPLY CURRENT

300

350

µA

current

Supply current during configuration

2.5 V / 3.6 V

3

7

mA

STANDARD INPUTS (RST, TEST)

Low-level input voltage

V

High-level input voltage

0.8

×V

CC

V

SCHMITT TRIGGER INPUTS (SDA, SCL, ADDR1, ADDR2, ADDR3, ADDR4)

Positive-going input threshold voltage

1.5

1.9

V

Negative-going input threshold voltage

0.9

1.3

V

0.5

1

V

RST, TEST, SDA, SCL, ADDR1, ADDR2,

High impedance leakage current

±50

nA

ADDR3, ADDR4

2

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