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BLT82 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BLT82 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 11 page ![]() 1996 Feb 05 2 Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES • High efficiency • High gain • Internal pre-matched input. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation for 900 MHz Time Division Multiple Axis (TDMA) communication systems. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. PINNING - SOT96-1 PIN SYMBOL DESCRIPTION 1, 8 b base 2, 4, 5, 7 e emitter 3, 6 c collector Fig.1 Simplified outline and symbol. handbook, halfpage 4 1 5 8 e c b MAM227 QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.5). MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) Pulsed, class-AB 900 6 3.5 ≥8 ≥50 typ. 10 typ. 65 2.8 ≥9 ≥57 |
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