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BLT82 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLT82 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 11 page ![]() 1996 Feb 05 3 Philips Semiconductors Product specification UHF power transistor BLT82 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 3.5 V IC collector current (DC) − 1A Ptot total power dissipation Ts =115 °C; note 1 − 1.9 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 175 °C Fig.2 DC SOAR. Ts = 115 °C. handbook, halfpage MGD207 10 VCE (V) 1 10−1 102 10 IC (A) 1 |
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