BLW32 datasheet(5/12 Pages) PHILIPS

5 / 12 page

August 1986

Philips Semiconductors

Product speciﬁcation

UHF linear power transistor

BLW32

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Notes

1. Measured under pulse conditions: tp ≤ 300 µs; δ≤ 0,02.

2. Measured under pulse conditions: tp ≤ 50 µs; δ≤ 0,01.

Collector-emitter breakdown voltage

VBE = 0; IC = 2 mA

V(BR)CES

50 V

open base; IC = 15 mA

V(BR)CEO

30 V

Emitter-base breakdown voltage

open collector; IE = 1 mA

V(BR)EBO

Collector cut-off current

VBE = 0; VCE = 30 V

ICES

0,5 mA

VBE = 0; VCE = 30 V; Tj = 175 °CICES

1,2 mA

D.C. current gain (1)

typ.

IC = 150 mA; VCE = 25 V

hFE

IC = 150 mA; VCE = 25 V; Tj = 175 °ChFE

120

Collector-emitter saturation voltage (1)

IC = 300 mA; IB = 30 mA

VCEsat

typ.

500 mV

Transition frequency at f = 500 MHz (2)

−IE = 150 mA; VCB = 25 V

typ.

3,5 GHz

−I

E = 300 mA; VCB = 25 V

typ.

3,4 GHz

Collector capacitance at f = 1 MHz

IE =Ie = 0; VCB = 25 V

typ.

3,7 pF

Feedback capacitance at f = 1 MHz

IC = 10 mA; VCE = 25 V

Cre

typ.

1,9 pF

Collector-stud capacitance

Ccs

typ.

1,2 pF

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