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BLW32 Datasheet(PDF) 9 Page - NXP Semiconductors

Part # BLW32
Description  UHF linear power transistor
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLW32 Datasheet(HTML) 9 Page - NXP Semiconductors

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August 1986
9
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
Fig.10 Bias circuit for class-A amplifier at
fvision = 860 MHz.
+Vs
+VCC
+VBB
0
R9
R8
R7
TR1
C3
R5
R4
C2
C1
R3
R2
D1
R1
D2
C4
R6
MGP437
List of components:
C1 = 100 pF ceramic capacitor
C2 = C3 = 100 nF polyester capacitor
C4 = 10
µF/25 V solid aluminium
electrolytic capacitor
R1 = 150
Ω carbon resistor (0,25 W)
R2 = 100
Ω preset potentiometer (0,1 W)
R3 = 82
Ω carbon resistor (0,25 W)
R4 = R5 = 2,2 k
Ω carbon resistor (0,25 W)
R6 = 12
Ω carbon resistor (0,5 W)
R7 = R8 = 820
Ω carbon resistor (0,25 W)
R9 = 33
Ω carbon resistor (0,25 W)
D1
= BZY88-C3V3
D2
= BY206
TR1
= BD136
Information for wideband application from 470 to 860 MHz available on request.
1. Three-tone test method (vision carrier
−8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal
≤−75 dB.
2. Two-tone test method (vision carrier 0 dB, sound carrier
−7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to
−20 dB.
Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of output power.
Typical values; VCE = 25 V; IC = 150 mA; fvision = 860 MHz; − − − Th =25 °C;  Th =70 °C.
handbook, full pagewidth
2
−50
−65
0
0.5
1
MGP438
−55
−60
30
0
20
10
1.5
Po sync (W)
dim
dcm
dim
(dB)
dcm
(%)



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