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BLW32 Datasheet(PDF) 9 Page - NXP Semiconductors |
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BLW32 Datasheet(HTML) 9 Page - NXP Semiconductors |
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9 / 12 page ![]() August 1986 9 Philips Semiconductors Product specification UHF linear power transistor BLW32 Fig.10 Bias circuit for class-A amplifier at fvision = 860 MHz. +Vs +VCC +VBB 0 R9 R8 R7 TR1 C3 R5 R4 C2 C1 R3 R2 D1 R1 D2 C4 R6 MGP437 List of components: C1 = 100 pF ceramic capacitor C2 = C3 = 100 nF polyester capacitor C4 = 10 µF/25 V solid aluminium electrolytic capacitor R1 = 150 Ω carbon resistor (0,25 W) R2 = 100 Ω preset potentiometer (0,1 W) R3 = 82 Ω carbon resistor (0,25 W) R4 = R5 = 2,2 k Ω carbon resistor (0,25 W) R6 = 12 Ω carbon resistor (0,5 W) R7 = R8 = 820 Ω carbon resistor (0,25 W) R9 = 33 Ω carbon resistor (0,25 W) D1 = BZY88-C3V3 D2 = BY206 TR1 = BD136 Information for wideband application from 470 to 860 MHz available on request. 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal ≤−75 dB. 2. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to −20 dB. Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of output power. Typical values; VCE = 25 V; IC = 150 mA; fvision = 860 MHz; − − − Th =25 °C; Th =70 °C. handbook, full pagewidth 2 −50 −65 0 0.5 1 MGP438 −55 −60 30 0 20 10 1.5 Po sync (W) dim dcm dim (dB) dcm (%) |
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