August 1986

2

Philips Semiconductors

Product specification

UHF linear power transistor

BLW32

DESCRIPTION

N-P-N silicon planar epitaxial

transistor primarily intended for use in

linear u.h.f. amplifiers for television

transmitters and transposers. The

excellent d.c. dissipation

properties for class-A operation are

obtained by means of diffused emitter

ballasting resistors and a multi-base

structure, providing an optimum

temperature profile on the crystal

area. The combination of optimum

thermal design and the application of

gold sandwich metallization

realizes excellent reliability

properties.

envelope with ceramic cap.

QUICK REFERENCE DATA

R.F. performance

Note

1. Three-tone test method (vision carrier

−8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to

peak sync level.

MODE OF OPERATION

MHz

V

mA

°C

dB

W

dB

class-A; linear amplifier

860

25

150

70

−60

>

0,5

>

11

860

25

150

25

−60

typ.

0,63 typ.

12,2

PIN CONFIGURATION

Fig.1 Simplified outline. SOT122A.

handbook, halfpage

Top view

MBK187

3

1

2

4

PINNING - SOT122A.

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.