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SC1486AEVB Datasheet(PDF) 11 Page - Semtech Corporation

Part # SC1486AEVB
Description  Dual Synchronous Buck DDR and DDR2 Power Supply Controller
PDF  29 Pages
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Manufacturer  SEMTECH [Semtech Corporation]
Direct Link  http://www.semtech.com
Logo SEMTECH - Semtech Corporation

SC1486AEVB Datasheet(HTML) 11 Page - Semtech Corporation

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 2004 Semtech Corp.
www.semtech.com
SC1486A
POWER MANAGEMENT
Application Information (Cont.)
Current Limit Circuit (Cont.)
latches off due to output overvoltage (see Output
Overvoltage Protection).
Power Good Output
Each controller has its own power good output. Power
good is an open-drain output and requires a pull-up
resistor. When the output voltage is 10% above or below
its set voltage, PGD gets pulled low. It is held low until
the output voltage returns to within 10% of the output
set voltage. PGD is also held low during start-up and will
not be allowed to transition high until soft start is over
(440 switching cycles) and the output reaches 90% of
its set voltage. There is a 5µs delay built into the PGD
circuitry to prevent false transitions.
Output Overvoltage Protection
When the output exceeds 10% of the its set voltage the
low-side MOSFET is latched on. It stays latched on and
the controller is latched off until reset (see below). There
is a 5µs delay built into the OV protection circuit to
prevent false transitions. An OV fault in either controller
will not cause the other one to shutdown. Note: to reset
VDDQ from any fault, VCCA1 or EN/PSV1 must be toggled.
To reset VTT from a fault, VCCA2 or REFIN must be
toggled.
Output Undervoltage Protection
When the output is 30% below its set voltage the output
is latched in a tri-stated condition. It stays latched and
the controller is latched off until reset (see below). There
is a 5µs delay built into the UV protection circuit to
prevent false transitions. An UV fault in either controller
will not cause the other one to shutdown. Note: to reset
VDDQ from any fault, VCCA1 or EN/PSV1 must be toggled.
To reset VTT from a fault, VCCA2 or REFIN must be
toggled.
POR, UVLO and Softstart
An internal power-on reset (POR) occurs when VCCA1 and
VCCA2 exceed 3V, resetting the fault latch and soft-start
counter, and preparing the PWM for switching. VCCA
undervoltage lockout (UVLO) circuitry inhibits switching
and forces the DL gate driver high until VCCA rises above
4.2V. At this time the circuit will come out of UVLO and
begin switching, and with the softstart circuit enabled,
will progressively limit the output current (by limiting the
current out of the ILIM pin) over a predetermined time
period of 440 switching cycles.
The ramp occurs in four steps:
1) 110 cycles at 25% ILIM with double minimum off-time
2) 110 cycles at 50% ILIM with normal minimum off-time
3) 110 cycles at 75% ILIM with normal minimum off-time
4) 110 cycles at 100% ILIM with normal minimum
off-time. At this point the output undervoltage and power
good circuitry is enabled.
There is 100mV of hysteresis built into the UVLO circuit
and when VCCA falls to 4.1V (nom.) the output drivers
are shut down and tristated.
MOSFET Gate Drivers
The DH and DL drivers are optimized for driving
moderate-sized high-side, and larger low-side power
MOSFETs. An adaptive dead-time circuit monitors the DL
output and prevents the high-side MOSFET from turning
on until DL is fully off (below ~1V). Conversely, it
monitors the phase node, LX, to determine the state of
the high side MOSFET, and prevents the low-side MOSFET
from turning on until DH is fully off (LX below ~1V). Be
sure there is low resistance and low inductance between
the DH and DL outputs to the gate of each MOSFET.
DDR Reference Buffer
The reference buffer is capable of driving 3mA and sinking
25µA. Since the output is class A, if additional sinking is
required an external pulldown resistor can be added.
Make sure that the ground side of this pulldown is tied
to VSSA2. As with most opamps, a small resistor is
required when driving a capacitive load. To ensure stability
use either a 10
Ω resistor in series with a 1µF capacitor
or a 100
Ω resistor in series with a 0.1µF capacitor from
REFOUT to AGND2.
Since it is possible to have as much as 10µF to 20µF of
capacitance at the memory socket or on-board the
DIMMs, it is recommended that a 0
Ω resistor is placed
between REFOUT and the DIMM sockets. This allows the
addition of extra resistance between REFOUT and the
DIMMs to avoid spurious OVP at startup, which can occur
if REFOUT rises really slowly and VTT overshoots it. The
extra resistance allows REFOUT to rise faster, avoiding
this issue.
REFIN should also be filtered so that VDDQ ripple does
not appear at the REFIN pin. If a resistor divider is used
to create REFIN from VDDQ, then a 0.1µF capacitor from
REFIN to VSSA2 will provide adequate filtering.



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