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CS5535 Datasheet(PDF) 508 Page - National Semiconductor (TI) |
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CS5535 Datasheet(HTML) 508 Page - National Semiconductor (TI) |
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508 / 555 page ![]() www.national.com 508 Revision 0.8 Flash Controller Register Descriptions (Continued) 5.19.2.2 NAND Control Register (NAND_CTL) 5.19.2.3 NAND I/O (NAND_IO) Flash Memory Offset Any Even Address between 800h-80Eh Flash I/O Offset 04h Type R/W Reset Value 01h NAND_CTL Register Map 76543 210 RSVD DIST_EN RDY_INT_ MASK ALE CLE CE# NAND_CTL Bit Descriptions Bit Name Description 7:5 RSVD (RO) Reserved (Read Only). Returns 0 when read. 4DIST_EN NAND Distract Interrupt Enable. 0: Disables the generation of NAND Distract Interrupt. 1: Enables the generation of NAND Distract Interrupt. 3 RDY_INT_MASK NAND Ready Interrupt Mask. 0: Interrupt is masked. 1: Enable NAND Flash device’s RDY/BUSY# signal to generate an interrupt. 2ALE Address Latch Enable. FLASH_ALE output signal reflects the value of this bit. 1CLE Command Latch Enable. FLASH_CLE output signal reflects the value of this bit. 0CE# Chip Enable. CE# signal reflects the value of this bit. The NAND_CS signals from the Diverse Device determine which CE# is asserted. Keep this bit low during entire NAND cycle. Writing a 1 to this bit resets the NAND controller. Flash Memory Offset Any Odd Address between 801h-80Fh Flash I/O Offset 05h Type R/W Reset Value 00h NAND_IO Register Map 76543 210 IO NAND_IO Bit Descriptions Bit Name Description 7:0 IO I/O Register. Writing to this register triggers a command/address phase sub-cycle on the NAND Flash interface. The data written to this register is put on the I/O bus during the sub-cycle. It returns previous written value when read. Note: Before writing to this register check for CTLR_BUSY bit (Flash Memory Offset 810h[2]/Flash I/O Offset 06h[2]) in NAND_STS register to be 0. |
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