RDA Microelectronics, Inc.

RDA5876 Datasheet V1.2

Page 6 of 22

5 Bluetooth Section Electrical Characteristics

Table 5-1

DC Electrical Specification (Recommended Operation Conditions):

SYMBOL

DESCRIPTION

MIN

TYP

MAX

UNIT

VBAT

Supply Voltage from battery or LDO

3.3

4.0

4.2

V

Tamb

Ambient Temperature

-20

27

+50

℃

VIL

CMOS Low Level Input Voltage

0

0.3*VIO

V

VIH

CMOS High Level Input Voltage

0.7*VIO

VIO

V

VTH

CMOS Threshold Voltage

0.5*VIO

V

Notes

:

1. VIO=1.8~3.3V

Table 5-2

DC Electrical Specification (Absolute Maximum Ratings):

SYMBOL

DESCRIPTION

MIN

TYP

MAX

UNIT

Tamb

Ambient Temperature

-20

+80

°C

IIN

Input Current

-10

+10

mA

VIN

Input Voltage

-0.3

VIO+0.3

V

Vlna

LNA Input Level

+10

dBm

Table 5-3

LDO

Power consumption specification

(VBAT = 4.0 V, VIO = 2.8V, TA = +27℃, RF 9dBm, LDO mode unless otherwise specified)

STATE

DESCRIPTION

Condition

TYP

UNIT

Headset voice

HV3 type

18

mA

Headset SNIFF

500ms cycle

NO INQUIRE and PAGE SCAN

0.5

mA

HCI only active

5.7

mA

Both SCAN

1.28S cycle

INQUIRE and PAGE SCAN

1.0

mA

DeepSleep

26Mhz crystal off

Ivbat=105uA,Ivio=13uA,External

32K input

118

μA

internal LDO off

LDO_ON off

Ivbat=6uA,Ivio=1uA

7

μA