INA780A datasheet(4/51 Pages) TI1

4 / 51 page

5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

Supply voltage

VIN+, VIN– (2)

Common mode voltage

–0.3

VALERT

ALERT

–0.3

Vs + 0.3

VIO

SDA, SCL

–0.3

IIN

Input current into any pin, excluding IS+ and IS–

IOUT

Digital output current

Junction temperature

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2)

VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.

5.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all

pins(1)

±2500

Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002, all

pins(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCM

Common-mode input voltage

–0.1

Operating supply voltage

2.7

5.5

Specified ambient temperature

–40

125

°C

5.4 Thermal Information

THERMAL METRIC(1) (2)

INA780

UNIT

DEK (WSON)

15 PINS

RθJA

Junction-to-ambient thermal resistance

30.8

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

28.7

°C/W

RθJB

Junction-to-board thermal resistance

8.3

°C/W

ΨJT

Junction-to-top characterization parameter

1.1

°C/W

YJB

Junction-to-board characterization parameter

8.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

n/a

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

Thermal metrics are relative to the internal die and are conservative relative to the heating that would occur from the package

leadframe shunt. For more details on heating, see the Safe Operating Area section.

INA780A, INA780B

SBOSAB6A – JULY 2023 – REVISED DECEMBER 2023

www.ti.com

Submit Document Feedback

Product Folder Links: INA780A INA780B

INA780A Datasheet(PDF) 4 Page - Texas Instruments

INA780A Datasheet(HTML) 4 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51

Datasheet Download

Link URL