PA22

4

PA22 REV C

SPECIFICATIONS

Unless otherwise noted: TC = 25 °C, CC = 47 pF, +VS = 100 V, -VS = -100 V. DC input specifications are +/-

value given.

ABSOLUTE MAXIMUM RATINGS

The PA22 is constructed from MOSFET transistors. ESD handling procedures must be

observed. The internal substrate contains Beryllia (BeO). Do not break the seal. If acciden-

tally broken, do not crush, machine, or subject to temperatures in excess of 850 °C to avoid

generating toxic fumes.

Parameter

Symbol1

1. +VS and -VS denote the positive and negative supply voltages.

Min

Max

Units

Supply Voltage, total

+VS to -VS

40

250

V

Output Current, peak, within SOA

IOUT

13.6

A

Power Dissipation, internal, continuous2

2. Long term operation at the maximum junction temperature will result in reduced product life. Derate power dissipation

to achieve high MTTF.

PD

250

W

Input Voltage, differential

VIN (Diff)

-25

25

V

Input Voltage, common mode

VCM

-Vs

+Vs

V

ILIM to OUT Pin Voltage Differential

VLIM

-5

5

V

Temperature, pin solder, 10s

260

°C

Temperature, junction

TJ

150

°C

Temperature Range, storage

-40

+85

°C

Operating Temperature Range, case

TC

-25

+85

°C

CAUTION