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AD5675R Datasheet(PDF) 4 Page - Analog Devices

Part # AD5675R
Description  16-Channel, 12-/16-Bit nanoDAC with 2 ppm/°C Voltage Reference TC, I2C Interface
PDF  31 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

AD5675R Datasheet(HTML) 4 Page - Analog Devices

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AD5673R/AD5677R
Data Sheet
Rev. 0 | Page 4 of 31
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
REFERENCE OUTPUT
Output Voltage4
2.4975
2.5025
V
Voltage Reference Temperature
Coefficient (TC)5, 6
2
5
ppm/°C
See voltage reference temperature coefficient
(TC) in the Terminology section
Output Impedance
0.04
Ω
Output Voltage Noise
13
µV p-p
0.1 Hz to 10 Hz
Output Voltage Noise Density
240
nV/√Hz
At ambient temperature (TA), f = 10 kHz,
CL = 10 nF, gain = 1 or 2
Load Regulation Sourcing
29
µV/mA
At TA
Load Regulation Sinking
74
µV/mA
At TA
Output Current Load Capability
±20
mA
VDD ≥ 3 V
Line Regulation
43
µV/V
At TA
Long-Term Stability Drift
77
ppm
After 1000 hours at 25°C
Thermal Hysteresis
125
ppm
First cycle
25
ppm
Additional cycles
LOGIC INPUTS
Input Current
±1
µA
Per pin
Input Voltage
Low, VIL
0.3 × VLOGIC
V
1.62 V ≤ VLOGIC ≤ 3.3 V
0.25 × VLOGIC
V
3.3 V ≤ VLOGIC ≤ 5.5 V
High, VIH
0.7 × VLOGIC
V
Pin Capacitance
4
pF
LOGIC OUTPUTS (SDA)
Output Voltage
Low, VOL
0.4
V
Output low current (IOL) = 3 mA
High, VOH
VLOGIC − 0.4
V
Output high current (IOH) = −3 mA
Floating State Output Capacitance
9
pF
POWER REQUIREMENTS
VLOGIC
1.62
5.5
V
1. 8 V logic compatibility
VLOGIC Supply Current (ILOGIC)
3
µA
Power-on, −40°C to +105°C
3
µA
Power-on, −40°C to +125°C
3
µA
Power-down, −40°C to +105°C
3
µA
Power-down, −40°C to +125°C
VDD
2.7
5.5
V
Gain = 1
VREF + 1.5
5.5
V
Gain = 2
VDD Supply Current (IDD)
VIH = VDD, VIL = GND, VDD = 2.7 V to 5.5 V
Normal Mode7
2.3
2.53
mA
Internal reference off, −40°C to +85°C
3.4
3.8
mA
Internal reference on, −40°C to +85°C
2.3
2.6
mA
Internal reference off
3.4
4.2
mA
Internal reference on
All Power-Down Modes8
2
3.4
µA
Power-down to 1 kΩ, −40°C to +85°C
2
5
µA
Power-down to 1 kΩ, −40°C to +105°C
2
11
µA
Power-down to 1 kΩ, −40°C to +125°C
1
DC specifications tested with the outputs unloaded, unless otherwise noted. Upper dead band = 10 mV and exists only when VREF = VDD with gain = 1, or when VREF/2 =
VDD with gain = 2. Linearity calculated using a reduced code range of 12 to 4080.
2
VDD = 5 V. The device includes current limiting intended to protect the devices during temporary overload conditions. Junction temperature (TJ) can be exceeded
during current limit. Operation above the specified maximum operation junction temperature can impair device reliability.
3
When drawing a load current at either rail, the output voltage headroom with respect to that rail is limited by the 25 Ω typical channel resistance of the output
devices. For example, when sinking 1 mA, the minimum output voltage = 25 Ω × 1 mA = 25 mV.
4
Initial accuracy presolder reflow is ±750 µV. Output voltage includes the effects of preconditioning drift. See the Internal Reference Setup section.
5
Reference is trimmed and tested at two temperatures and is characterized from −40°C to +125°C.
6
Voltage reference temperature coefficient is calculated as per the box method. See the voltage reference temperature coefficient (TC) definition in the Terminology
section for further information.
7
Interface inactive. All DACs active. DAC outputs unloaded.
8
All DACs powered down.



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