4.2

Power MOSFETs

HIN is referred to channels HIN1, HIN2, HIN3; LIN is referred to channels LIN1, LIN2, LIN3.

Table 6. Electrical characteristics

VCC = 15 V; TJ = +25 °C, unless otherwise specified.

Symbol Parameter

Test conditions

Min

Typ

Max Unit

V(BR)DS Drain-source breakdown voltage

ID = 1 mA (1)

600

V

IDSS

Zero gate voltage drain current

VDS = 500 V

EN = SENSE = GND

1

µA

VGS(th)

Gate threshold voltage

VDS = VGS , ID = 250 µA (1)

3

4

5

V

RDS(on) Static drain-source on-resistance

ID = 1.75 A;

VGS = 10 V;

-

1.38 1.75

Ω

IAS

Avalanche current, repetitive or not repetitive

Pulse width limited by TJ max. (1)

1

A

EAS

Single pulse avalanche energy

Starting TJ = 25 °C,

ID = IAS, VDD = 50 V (1)

132

mJ

VSD

Diode forward on voltage

EN = SENSE = GND

ISD = 3.5 A;

-

-

1.6

V

1. Tested at wafer level before packaging.

PWD5T60

Electrical

characteristics

DS14558 - Rev 2

page 8/27