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HV256 Datasheet(PDF) 5 Page - Supertex, Inc |
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HV256 Datasheet(HTML) 5 Page - Supertex, Inc |
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5 / 11 page ![]() 5 HV256 R SINK / RSOURCE The V DD_BYP ,VDD_BYP ,and VNN_BYP pins are internal. high impedance current. mirror gate nodes, brought out to mantain stable opamp biasing currents in noisy power supply environments. 0.1uF/25V bypass capacitors, added from V PP_BYP pin to VPP , from VDD_BYP pin to V DD , and from VNN_BYP to VNN,will force the high impedance gate nodes to follow fluctuation of power lines. The expected voltages at the V DD_BYP, and VNN_BYP pins are typically 1.5 volts from their respectful power supply. The expected voltage at V PP_BYP is typically 3V below V PP. BYP _VPP HVOpamp VDD VPP BYP _VNN VNN Set by RSOURCE Set by RSINK HVOUT0 BYP _VPP Cap BYP _VNN Cap Current limit Current limit BYP _VDD BYP _VDD Cap To internal biasing 0.1uF / 25V 0.1uF / 25V 0.1uF / 25V HVOpamp HVOUT31 Typical Characteristics ISINK vs RSINK (VPP = 300V, VDD = 6.5V, VNN = 5.5V, TA = 25OC) RSINK (KΩ) 0 100 200 300 400 500 600 25k 150k 250k min max min max ISOURCE vs RSOURCE (VPP = 300V, VDD = 6.5V, VNN = 5.5V, TA = 25OC) RSOURCE (KΩ) 0 100 200 300 400 500 600 25k 150k 250k |
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