7.4 Power Supply Recommendations

The AMC23C10-Q1 does not require any specific power-up sequencing. The high-side power supply (VDD1) is

decoupled with a low-ESR, 100nF capacitor (C1) parallel to a low-ESR, 1µF capacitor (C2). The low-side power

supply (VDD2) is equally decoupled with a low-ESR, 100nF capacitor (C3) parallel to a low-ESR, 1µF capacitor

(C4). Place all four capacitors (C1, C2, C3, and C4) as close to the device as possible. Figure 7-5 shows a

decoupling schematic for the AMC23C10-Q1.

For high VDD1 supply voltages (>5.5V) place a 10Ω resistor (R4) in series with the VDD1 power supply for

additional filtering.

to MCU

Low-side supply (2.7..5.5V)

VDD1

GND1

INP

INN

AMC23C10-Q1

VDD2

OUT2

OUT1

GND2

C1

100nF

C2

1µF

C3

100nF

C4

1µF

R2

4.7k

to MCU

R4

10

High-side supply (3..27V)

C6

1nF

R5

10

Figure 7-5. Decoupling of the AMC23C10-Q1

Make sure capacitors provide adequate effective capacitance under the applicable DC bias conditions

experienced in the application. Multilayer ceramic capacitors (MLCCs) typically exhibit only a fraction of the

nominal capacitance under real-world conditions. Take this factor into consideration when selecting these

capacitors. This problem is especially acute in low-profile capacitors, in which the dielectric field strength is

higher than in taller components. Reputable capacitor manufacturers provide capacitance versus DC bias curves

that greatly simplify component selection.

7.5 Layout

7.5.1 Layout Guidelines

Figure 7-6 shows a layout recommendation with the critical placement of the decoupling capacitors (as close as

possible to the AMC23C10-Q1 supply pins) and placement of the other components required by the device.

7.5.2 Layout Example

High-side

supply

C2

C1

AMC23C10-Q1

Clearance area, to be

kept free of any

conductive materials.

Top Metal

Inner or Bottom Layer Metal

Via

OUT2

OUT1

GND1

GND2

to MCU

to MCU

C4

C3

R4

Low-side

supply

C6

INN

INP

INPUT

Figure 7-6. Recommended Layout of the AMC23C10-Q1

AMC23C10-Q1

SBASB90 – FEBRUARY 2025

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