5.3 Recommended Operating Conditions

over operating ambient temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

POWER SUPPLY

VVDD1

High-side power-supply voltage

VDD1 to GND1

3.0

5

25

V

VVDD2

Low-side power supply voltage

VDD2 to GND2

2.7

3.3

5.5

V

ANALOG INPUT

VINP

Input voltage

INP to GND1, VDD1 ≤ 4.3 V

–1

VDD1 –

0.3

V

INP to GND1, VDD1 > 4.3V

–1

4

VINN

Input voltage

INN to GND1, VDD1 ≤ 4.3 V

0

VDD1 –

0.3

V

INP to GND1, VDD1 > 4.3 V

0

4

DIGITAL OUTPUTS

Digital output voltage

OUT1, OUT2 to GND2

GND2

VDD2

V

Sink current

OUT1

0

4

mA

Source or sink current

OUT2

–10

4

mA

TEMPERATURE RANGE

TA

Specified ambient temperature

–40

25

125

°C

5.4 Thermal Information

THERMAL METRIC(1)

DWV (SOIC)

UNIT

8 PINS

RθJA

Junction-to-ambient thermal resistance

102.8

°C/W

RθJC(top) Junction-to-case (top) thermal resistance

45.1

°C/W

RθJB

Junction-to-board thermal resistance

63.0

°C/W

ΨJT

Junction-to-top characterization parameter

14.3

°C/W

ΨJB

Junction-to-board characterization parameter

61.1

°C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance

n/a

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

note.

5.5 Power Ratings

PARAMETER

TEST CONDITIONS

VALUE

UNIT

PD

Maximum power dissipation (both sides)

VDD1 = 25 V, VDD2 = 5.5 V

95

mW

VDD1 = VDD2 = 5.5 V

30

VDD1 = VDD2 = 3.6 V

20

PD1

Maximum power dissipation (high-side)

VDD1 = 25 V

83

mW

VDD1 = 5.5 V

18

VDD1 = 3.6 V

12

PD2

Maximum power dissipation (low-side)

VDD2 = 5.5 V

12

mW

VDD2 = 3.6 V

8

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