5.9 Electrical Characteristics

minimum and maximum specifications apply from TA = –40°C to 125°C, VDD1 = 3.0 V to 25 V, VDD2 = 2.7 V to 5.5 V,

INN = GND1, and VINP = –1 V to 4 V(3) ; typical specifications are at TA = 25°C, VDD1 = 5 V, VDD2 = 3.3 V, and INN =

GND1 (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ANALOG INPUT

RIN

Input resistance

INP, INN pin, 0 ≤ VIN ≤ 4 V

1

GΩ

IBIAS

Input bias current

INP pin, 0 ≤ VIN ≤ 4 V(2)

0.1

25

nA

INP pin, –400 mV ≤ VIN ≤ 0 V(3)

–310

–0.5

INP pin, –1V ≤ VIN < –400 mV(4)

–80

–40

–10

µA

INN pin, 0 ≤ VIN ≤ 4 V(2)

0.5

12

nA

CIN

Input capacitance

INP, INN pin

4

pF

COMPARATOR

VIT+

Positive-going trip threshold

VINN + VHYS / 2

mV

VIT–

Negative-going trip threshold

VINN –VHYS / 2

mV

Trip threshold error

(VIT+ – VINN – VHYS / 2), VHYS = 25 mV,

INN = GND1, VINP rising

–6

6

mV

(VIT– – VINN + VHYS / 2), VHYS = 25 mV,

INN = GND1, VINP falling

–6

6

VHYS

Trip threshold hysteresis

(VIT+ – VIT–)

25

mV

DIGITAL OUTPUTS

VOL

Low-level output voltage

ISINK = 4 mA

80

250

mV

VOH

High-level output voltage

ISOURCE = 4mA (push-pull output only)

VDD2 –

175 mV

VDD2

V

ILKG

Open-drain output leakage current

VDD2 = 5 V, VOUT = 5 V

5

100

nA

CMTI

Common-mode transient immunity

|VINP – VINN| ≥ 25 mV, push-pull output

100

150

V/ns

|VINP – VINN| ≥ 25 mV, open-drain output,

RPULLUP = 10 kΩ

75

150

AMC23C10-Q1

SBASB90 – FEBRUARY 2025

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