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INA148 Datasheet(PDF) 3 Page - Texas Instruments

Part # INA148
Description  INA148-Q1 ±200-V Common-Mode Voltage Difference Amplifier
PDF  25 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

INA148 Datasheet(HTML) 3 Page - Texas Instruments

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1
REF
8
NC
2
–IN
7
V+
3
+IN
6
OUT
4
V–
5
NC
3
INA148-Q1
www.ti.com
SBOS472B – MARCH 2009 – REVISED JUNE 2016
Product Folder Links: INA148-Q1
Submit Documentation Feedback
Copyright © 2009–2016, Texas Instruments Incorporated
5 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
Pin Functions
PIN
I/O
DESCRIPTION
NAME
NO.
+IN
3
I
Noninverting input
–IN
2
I
Inverting input
NC
5, 8
—
No connection
OUT
6
O
Output voltage
REF
1
I
Reference voltage input
V+
7
I
Positive supply voltage
V–
4
I
Negative supply voltage
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage
V+ to V–
36
V
Input voltage
Continuous
±200
V
Peak (0.1 s)
±500
Short circuit to ground duration
Continuous
Package thermal impedance, junction to free air
97.1
°C/W
Operating free-air temperature
–40
125
°C
Maximum operating virtual-junction temperature
150
°C
Lead temperature (soldering, 10 s)
300
°C
Storage temperature, Tstg
–65
150
°C
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002(1)
±1500
V
Charged-device model (CDM), per AEC Q100-011
±2000
Machine model
±150



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