4

DCH010505D, DCH010505S

DCH010512D, DCH010512S

DCH010515D, DCH010515S

SBVS073J – NOVEMBER 2006 – REVISED MAY 2020

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Product Folder Links: DCH010505D DCH010505S DCH010512D DCH010512S DCH010515D DCH010515S

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Copyright © 2006–2020, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Input voltage (5-V input models)

7

V

Storage temperature, Tstg

–55

125

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±250

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

+VI

Input voltage

4.5

5.5

V

TA

Operating ambient temperature

–40

85

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

DCH01 SERIES

UNIT

EDJ

(SIP-SINGLE)

EDJ

(SIP-DUAL)

7 PINS

7 PINS

RθJA

Junction-to-ambient thermal resistance

66

66

°C/W

ψJT

Junction-to-top characterization parameter

3

3

°C/W

ψJB

Junction-to-board characterization parameter

66

66

°C/W