TSC2003-Q1

SBAS454 – DECEMBER 2008 ........................................................................................................................................................................................... www.ti.com

ELECTRICAL CHARACTERISTICS (continued)

TA = –40°C to 85°C, VDD = 2.7 V, VREF = 2.5-V external voltage, I

2C bus frequency = 3.4 MHz, 12-bit mode,

digital inputs = GND or VDD (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Reference Output

Internal reference voltage

2.45

2.50

2.55

V

ppm/

Internal reference drift

25

°C

Internal reference on

300

Ω

ZO

Output impedance

Internal reference off

1

G

Ω

IQ

Quiescent current

PD1 = 1, PD0 = 0, SDA and SCL high

750

µA

Reference Input

VI

Input voltage

2

VDD

V

RI

Resistance

PD1 = PD0 = 0

1

G

Ω

Battery Monitor

VI

Input voltage

0.5

6

V

Sampling battery

10

k

Ω

ZI

Input impedance

Battery monitor off

1

G

Ω

External VREF = 2.5 V

–2

+2

Accuracy

%

Internal reference

–3

+3

Temperature Measurement

Temperature range

–40

85

°C

Differential method(3)

1.6

Resolution

°C

TEMP0(4)

0.3

Differential method(3)

±2

Accuracy

°C

TEMP0(4)

±3

Digital Input/Output

High-level input voltage, all

VIH

| IIH | ≤ 5 µA

0.7 × VDD

VDD + 0.3

V

except PENIRQ(5)

Low-level input voltage, all except

VIL

| IIL | ≤ 5 µA

–0.3

0.3 × VDD

V

PENIRQ(5)

High-level output voltage, all

VOH

IOH = –250 µA

0.8 × VDD

V

except PENIRQ

Low-level output voltage, all

VOL

IOL = 250 µA

0.4

V

except PENIRQ

Low-level output voltage,

VOL

30-k

Ω pullup

0.4

V

PENIRQ

Ci

Input capacitance

SDA, SCL

10

pF

(3)

Difference between TEMP0 and TEMP1 measurement. No calibration necessary.

(4)

Temperature drift is –2.1 mV/°C

(5)

Specified by design

4

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