TPS62650-Q1

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SLVSB62B – MARCH 2012 – REVISED FEBRUARY 2013

THERMAL INFORMATION

TPS62650-Q1

THERMAL METRIC(1)

YFF

UNITS

9 PINS

θJA

Junction-to-ambient thermal resistance

107.0

θJCtop

Junction-to-case (top) thermal resistance

0.9

θJB

Junction-to-board thermal resistance

18.1

°C/W

ψJT

Junction-to-top characterization parameter

4.0

ψJB

Junction-to-board characterization parameter

18.0

θJCbot

Junction-to-case (bottom) thermal resistance

n/a

spacer

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

ELECTRICAL CHARACTERISTICS

Minimum and maximum values are at VI = 2.3V to 5.5V, VO = 1.2 V, EN = 1.8V, EN_DCDC bit = 1, AUTO mode and

TA = -40°C to 105°C; Circuit of Parameter Measurement Information section (unless otherwise noted). Typical values are at

VI = 3.6V, VO = 1.2 V, EN = 1.8V, EN_DCDC bit = 1, AUTO mode and TA = 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENT

VI

Input voltage range

2.3

5.5

V

VI = 3.6 V, IO = 0 mA, -40°C ≤ TA≤ 105°C. Device not switching

38

80

μA

IQ

Operating quiescent current

VI = 3.6 V, IO = 0 mA. PWM mode

5.35

mA

VI = 3.6 V, EN = GND, EN_DCDC bit = X, -40°C ≤ TA≤ 105°C

0.5

10

μA

I(SD)

Shutdown current

VI = 3.6 V, EN = VI, EN_DCDC bit = 0, -40°C ≤ TA≤ 105°C

0.5

10

μA

UVLO

Undervoltage lockout threshold

Falling

2.05

2.15

V

ENABLE, VSEL, SDA, SCL

VIH

High-level input voltage

0.9

V

VIL

Low-level input voltage

0.4

V

Ilkg

Input leakage current

Input tied to GND or VI, -40°C ≤ TA≤ 105°C

0.01

0.7

μA

POWER SWITCH

VI = V(GS) = 3.6 V

255

rDS(on)

P-channel MOSFET on resistance

m

Ω

VI = V(GS) = 2.5 V

335

Ilkg

P-channel leakage current, PMOS

V(DS) = 5.5 V, -40°C ≤ TA≤ 105°C

1

μA

VI = V(GS) = 3.6 V

140

rDS(on)

N-channel MOSFET on resistance

m

Ω

VI = V(GS) = 2.5 V

200

Ilkg

N-channel leakage current, NMOS

V(DS) = 5.5 V, -40°C ≤ TA≤ 105°C

1

μA

Discharge resistor for power-down

rDIS

15

50

Ω

sequence

P-MOS current limit

2.3 V

≤ VI ≤ 4.8 V. Open loop

1200

1500

1850

mA

Input current limit under short-circuit

VO = 0 V

11

mA

conditions

Thermal shutdown

140

°C

Thermal shutdown hysteresis

15

°C

OSCILLATOR

IO = 0 mA. PWM mode, TA= 25°C

5.4

6

6.6

fSW

Oscillator frequency

MHz

IO = 0 mA. PWM mode, -40°C ≤ TA≤ 105°C

5.2

6

6.8

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