ON

OFF

C

= 1

F

IN

µ

GND

V

IN

V

BATT

C

L

GND

R

L

C

L

V

OUT

SMPS

(see Note A)

GND

TPS22921/22/22B

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TPS22921, TPS22922, TPS22922B

SLVS749C – NOVEMBER 2008 – REVISED JANUARY 2015

TPS2292x 3.6-V, 2-A, 14-m

Ω ON-Resistance Load Switch With Controlled Turnon

1 Features

2 Applications

1

•

Integrated P-Channel Load Switch

•

PDAs

•

Input Voltage: 0.9 V to 3.6 V

•

Cell Phones

•

ON-Resistance (Typical Values)

•

GPS Devices

•

MP3 Players

–

rON = 14 mΩ at VIN = 3.6 V

•

Peripheral Ports

–

rON = 20 mΩ at VIN = 2.5 V

•

Portable Media Players

–

rON = 33 mΩ at VIN = 1.8 V

•

RF Modules

–

rON = 67 mΩ at VIN = 1.2 V

–

rON = 116 mΩ at VIN = 1.0 V

3 Description

•

2-A Maximum Continuous Switch Current

TPS22921, TPS22922, and TPS22922B are small,

•

Quiescent Current:

low rON load switches with controlled turnon. The

–

Typical 78 nA at 1.8 V

TPS22921/2/2B contains a P-channel MOSFET that

can operate over an input voltage range of 0.9 V to

•

Shutdown Current:

3.6 V. The switch is controlled by an on/off input

–

Typical 35 nA at 1.8 V

(ON), which can interface directly with low-voltage

•

Low Threshold Control Input Enable the use of

control signals. In TPS22922 and in TPS22922B, a

1.2 V, 1.8 V, 2.5 V, or 3.3 V Logic

65-

Ω on-chip load resistor is added for output quick

discharge when the switch is turned off. The rise time

•

Controlled Slew Rate to Avoid Inrush Currents

(slew rate) of the device is internally controlled in

–

tR = 30 μs at VIN = 1.8 V (TPS22921/2)

order

to

avoid

inrush

current:

TPS22921

and

–

tR = 200 μs at VIN = 1.8 V (TPS22922B)

TPS22922 feature a 30-

μs rise time, whereas

TPS22922B is 200

μs.

•

Quick Output Discharge (TPS22922/2B)

•

ESD Performance Tested Per JESD 22

TPS22921, TPS22922, and TPS22922B feature low

quiescent and shutdown currents and are available in

–

3000-V Human Body Model

space-saving

6-pin

wafer-chip-scale

packages

(A114-B, Class II)

DSBGA (WCSP: YZP and YZT with 0.5-mm pitch and

–

1000-V Charged-Device Model (C101)

YFP with 0.4-mm pitch) which make them ideal for

•

Six Terminal Wafer-Chip-Scale DSBGA Package

portable electronics. The devices are characterized

(nominal dimensions shown - see Mechanical,

for operation over the free-air temperature range of

–40°C to 85°C.

Packaging, and Orderable Information for details)

–

0.9-mm × 1.4-mm, 0.5-mm Pitch,

Device Information(1)

0.5 mm Height (YZP)

PART NUMBER

PACKAGE

BODY SIZE (NOM)

–

0.9-mm × 1.4-mm, 0.5-mm Pitch,

YZT

0.625 mm Height (YZT)

0.9 mm × 1.4 mm

TPS22921(1)

YZP

–

0.8-mm × 1.2-mm, 0.4-mm Pitch,

YFP

0.8 mm × 1.2 mm

0.5-mm Height (YFP)

YZP

0.9 mm × 1.4 mm

TPS22922

TPS22922B

YFP

0.8 mm × 1.2 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

4 Typical Application

A.

Switched-mode power supply

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION

DATA.