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INA333 Datasheet(PDF) 4 Page - Texas Instruments

Part # INA333
Description  INA333-Q1 Automotive, Zerø-Drift, micro-Power Instrumentation Amplifier
PDF  30 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

INA333 Datasheet(HTML) 4 Page - Texas Instruments

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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VS
Supply voltage
Single-supply, VS = (V+)
7
V
Dual-supply, VS = (V+) – (V–)
±3.5
Input voltage
Common-mode
(V–) – 0.3
(V+) + 0.3
V
Differential
(V+) – (V–) +
0.2
Input current
±10
mA
Output short circuit(2)
Continuous
Continuous
TA
Operating temperature
–55
150
°C
TJ
Junction temperature
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
Operation outside of Absolute Maximum Ratings may cause permanent damage to the device. Absolute Maximum Ratings do
not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating
Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be
fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2)
Short-circuit to ground, one amplifier per package.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002
HBM ESD classification level 2(1)
±2000
V
Charge device model (CDM), per AEC Q100-011
CDM ESD classification level C5
±750
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VS
Supply voltage
1.8
5.5
V
TA
Operating temperature
–40
125
°C
6.4 Thermal Information
THERMAL METRIC(1)
INA333-Q1
UNIT
DGK (VSSOP)
8 PINS
RθJA
Junction-to-ambient thermal resistance
169.5
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
62.7
°C/W
RθJB
Junction-to-board thermal resistance
90.3
°C/W
ψJT
Junction-to-top characterization parameter
7.6
°C/W
ψJB
Junction-to-board characterization parameter
88.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
INA333-Q1
SBOS464B – SEPTEMBER 2019 – REVISED JUNE 2023
www.ti.com
4
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Copyright © 2023 Texas Instruments Incorporated
Product Folder Links: INA333-Q1



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