6.5 Electrical Characteristics

at VS = 1.8 V to 5.5 V at TA = 25°C, RL = 10 kΩ, VREF = VS / 2, and G = 1 (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT(1)

VOSI

Input stage offset voltage(2)

±10

±25

μV

vs temperature, TA = –40°C to +125°C

±0.1

μV/°C

VOSO

Output stage offset

voltage(2)

±25

±110

μV

vs temperature, TA = –40°C to +125°C

±0.5

μV/°C

PSRR

Power-supply rejection

ratio

90

102

dB

Zid

Differential impedance

100 || 3

GΩ || pF

Zic

Common-mode impedance

100 || 3

GΩ || pF

VCM

Common-mode voltage

VO = 0 V

(V–) + 0.1

(V+) – 0.1

V

CMRR

Common-mode rejection

ratio

DC to 60 Hz,

VS = 5.5 V, VCM = (V–) +

0.1 V to (V+) – 0.1 V

G = 1

78

90

dB

G = 10

96

110

G = 100

96

115

G = 1000

96

115

INPUT BIAS CURRENT

IB

Input bias current

±70

±280

pA

TA = –40°C to +125°C

See Figure 6-26

pA/°C

IOS

Input offset current

±50

±280

pA

TA = –40°C to +125°C

See Figure 6-28

pA/°C

INPUT VOLTAGE NOISE

eNI

Input voltage noise

G = 100, RS = 0 Ω

f = 10 Hz

50

nV/√Hz

f = 100 Hz

50

f = 1 kHz

50

f = 0.1 Hz to 10 Hz

1

μVPP

In

Input current noise

f = 10 Hz

100

fA/√Hz

f = 0.1 Hz to 10 Hz

2

pAPP

GAIN

Gain equation

1 + (100

kΩ / RG)

V/V

G

Gain

1

1000

V/V

GE

Gain error

VS = 5.5 V,

(V–) + 100 mV ≤ VO ≤ (V+)

– 100 mV

G = 1

±0.01

±0.1

%

G = 10

±0.05

±0.25

G = 100

±0.07

±0.25

G = 1000

±0.25

±0.5

Gain vs temperature

TA = –40°C to +125°C

±1

±5

ppm/°C

G > 1(3)

±15

±50

Gain nonlinearity

G = 1 to 1000

VS = 5.5 V, (V–) + 100 mV ≤ VO ≤ (V+) – 100 mV

10

ppm

OUTPUT

Output voltage swing from

rail

VS = 5.5 V

40

50

mV

Capacitive load drive

500

pF

ISC

Short-circuit current

Continuous to common

–40, +5

mA

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INA333-Q1

SBOS464B – SEPTEMBER 2019 – REVISED JUNE 2023

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