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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

Supply voltage dual supply, VS = (V+) – (V–)

±20

Supply voltage single supply, VS = (V+) – (V–)

Signal input pins

–60

VREF pin

–20

Signal output pins maximum voltage

(–Vs) – 0.5

(+Vs) + 0.5

Signal output pins maximum current

–50

Output short-circuit(2)

Continuous

Operating Temperature, TA

–50

150

°C

Junction Temperature, TJ

175

°C

Storage Temperature, Tstg

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2)

Short-circuit to VS / 2.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1500

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±750

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage, VS

Single-supply

4.5

Dual-supply

±2.25

±18

Specified temperature, TA

Specified temperature

–40

125

°C

7.4 Thermal Information

THERMAL METRIC(1)

INA819

UNIT

D (SOIC)

DGK (VSSOP)

DRG (WSON)

8 PINS

RθJA

Junction-to-ambient thermal resistance

119.6

215.4

55.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

66.3

57.9

°C/W

RθJB

Junction-to-board thermal resistance

61.9

97.8

28.6

°C/W

ψJT

Junction-to-top characterization parameter

20.5

10.5

1.8

°C/W

ψJB

Junction-to-board characterization parameter

61.4

96.1

28.6

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

12.1

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

www.ti.com

INA819

SBOS959D – DECEMBER 2018 – REVISED APRIL 2022

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