MSP430 datasheet(34/96 Pages) TI2

34 / 96 page

MSP430G2533, MSP430G2433, MSP430G2333, MSP430G2233

MSP430G2403, MSP430G2303, MSP430G2203

SLAS734G – APRIL 2011 – REVISED APRIL 2016

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Product Folder Links: MSP430G2533 MSP430G2433 MSP430G2333 MSP430G2233 MSP430G2403 MSP430G2303

MSP430G2203

Specifications

(1)

The sensor current ISENSOR is consumed if (ADC10ON = 1 and REFON = 1) or (ADC10ON = 1 and INCH = 0Ah and sample signal is

high). When REFON = 1, ISENSOR is included in IREF+. When REFON = 0, ISENSOR applies during conversion of the temperature sensor

input (INCH = 0Ah).

(2)

The following formula can be used to calculate the temperature sensor output voltage:

VSensor,typ = TCSensor (273 + T [°C] ) + VOffset,sensor [mV] or

VSensor,typ = TCSensor T [°C] + VSensor(TA = 0°C) [mV]

(3)

The typical equivalent impedance of the sensor is 51 k

Ω. The sample time required includes the sensor-on time tSENSOR(on).

(4)

No additional current is needed. The VMID is used during sampling.

(5)

The on-time tVMID(on) is included in the sampling time tVMID(sample); no additional on time is needed.

5.34 10-Bit ADC, Temperature Sensor and Built-In VMID (MSP430G2x33 Only)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

VCC

MIN

TYP

MAX

UNIT

ISENSOR

Temperature sensor supply

current(1)

REFON = 0, INCHx = 0Ah, TA = 25°C

3 V

µA

TCSENSOR

ADC10ON = 1, INCHx = 0Ah (2)

3 V

3.55

mV/°C

tSensor(sample)

Sample time required if channel 10

is selected (3)

ADC10ON = 1, INCHx = 0Ah,

Error of conversion result

≤ 1 LSB

3 V

µs

IVMID

Current into divider at channel 11

ADC10ON = 1, INCHx = 0Bh

3 V

(4)

µA

VMID

VCC divider at channel 11

ADC10ON = 1, INCHx = 0Bh,

VMID ≈ 0.5 × VCC

3 V

1.5

tVMID(sample)

Sample time required if channel 11

is selected (5)

ADC10ON = 1, INCHx = 0Bh,

Error of conversion result

≤ 1 LSB

3 V

1220

(1)

Do not exceed the cumulative program time when writing to a 64-byte flash block. This parameter applies to all programming methods:

individual word or byte write and block write modes.

(2)

These values are hardwired into the state machine of the flash controller (tFTG = 1/fFTG).

5.35 Flash Memory

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)

PARAMETER

TEST

CONDITIONS

VCC

MIN

TYP

MAX

UNIT

VCC(PGM/ERASE)

Program and erase supply voltage

2.2

3.6

fFTG

Flash timing generator frequency

257

476

kHz

IPGM

Supply current from VCC during program

2.2 V, 3.6 V

IERASE

Supply current from VCC during erase

2.2 V, 3.6 V

tCPT

Cumulative program time(1)

2.2 V, 3.6 V

tCMErase

Cumulative mass erase time

2.2 V, 3.6 V

Program and erase endurance

104

105

cycles

tRetention

Data retention duration

TJ = 25°C

100

years

tWord

Word or byte program time

See (2)

tFTG

tBlock, 0

Block program time for first byte or word

See (2)

tFTG

tBlock, 1-63

Block program time for each additional byte or

word

See (2)

tFTG

tBlock, End

Block program end-sequence wait time

See (2)

tFTG

tMass Erase

Mass erase time

See (2)

10593

tFTG

tSeg Erase

Segment erase time

See (2)

4819

tFTG

MSP430 Datasheet(PDF) 34 Page - Texas Instruments

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