6.4 Thermal Information

THERMAL METRIC(1)

PGA854

UNIT

RGT (VQFN)

16 PINS

RθJA

Junction-to-ambient thermal resistance

47.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

53.6

°C/W

RθJB

Junction-to-board thermal resistance

22.0

°C/W

ψJT

Junction-to-top characterization parameter

1.4

°C/W

ψJB

Junction-to-board characterization parameter

22.0

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

7.8

°C/W

(1)

For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

at TA = 25°C, VS = VSOUT = ±15V, VICM = VOCM at mid-supply, RL = 10kΩ, and G = 1V/V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

VOS

Differential offset voltage (RTI)

G = 5 to 100

±50

±300

µV

G = 0.5, 1, 2

±100 / G

±700 / G

Differential offset voltage drift (RTI)

TA = –40°C to +125°C

G > 1

±0.1

±1.0

µV/°C

G = 0.5, 1

±0.2

±2.0

PSRR

Power-supply rejection ratio

±4.5V ≤ VS ≤ ±18V, RTI

G = 0.5

108

124

dB

G = 1

114

128

G = 2

118

130

G ≥ 5

120

134

zid

Differential input impedance

100 || 1

GΩ || pF

TA = –40°C to +125°C

10 || 1

zic

Common-mode input impedance

100 || 4.4

VICM

Common-mode input voltage

VS = ±4.5V to ±18V, TA = –40°C to +125°C

(VS–) + 3

(VS+) – 3

V

VIN

Differential input voltage(1)

–16

+16

V

CMRR

Common-mode rejection ratio

At dc to 60Hz,

VICM = ±10V,

TA = –40°C to +125°C,

RTI

G = 0.5

69

82

dB

G = 1

75

88

G = 2

80

94

G = 5

88

100

G = 10

95

106

G = 20

100

112

G = 50

108

116

G = 100

116

124

BIAS CURRENT

IB

Input bias current

±0.5

±2

nA

TA = –40°C to +125°C

±1

±3.6

Input bias current drift

TA = –40°C to +125°C

±5

pA/°C

IOS

Input offset current

±0.5

±1

nA

TA = –40°C to +125°C

±1

±2

Input offset current drift

TA = –40°C to +125°C

±5

pA/°C

PGA854

SBOSAN2A – AUGUST 2025 – REVISED DECEMBER 2025

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