INA849 datasheet(13/39 Pages) TI2

13 / 39 page

6.6 Typical Characteristics (continued)

at TA = 25°C, VS = VSOUT = ±15V, VICM = VOCM = 0V, RL = 10kΩ, and G =1V/V (unless otherwise noted)

Input Offset Current (nA)

-1

-0.8

-0.6

-0.4

-0.2

0.2

0.4

0.6

0.8

N = 8126

Mean = 0.0067nA

Std. dev = 0.1473nA

G = 1V/V

Figure 6-25. Distribution of Input Offset Current

Temperature ( C)

-40

-20

100

120

140

-1

-0.75

-0.5

-0.25

0.25

0.5

0.75

Mean

-3

N = 30

1 wafer lot

G = 1V/V

Figure 6-26. Input Offset Current vs Temperature

Frequency (Hz)

100

200

300

500

700

1000

100m

100

10k

100k

G = 0.5

G = 1

G = 2

G = 5

G = 10

G = 20

G = 50

G = 100

Typical unit shown

Figure 6-27. Voltage Noise Spectral Density (RTI) vs Frequency

Time (1s/div)

Typical unit shown

G = 100V/V

Figure 6-28. 0.1Hz to 10Hz Voltage Noise (RTI)

Time (1 s/div)

Typical unit shown

G = 1V/V

Figure 6-29. 0.1Hz to 10Hz Voltage Noise (RTI)

Time (1 s/div)

Typical unit shown

G = 0.5V/V

Figure 6-30. 0.1Hz to 10Hz Voltage Noise (RTI)

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PGA854

SBOSAN2A – AUGUST 2025 – REVISED DECEMBER 2025

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