INA849 datasheet(9/39 Pages) TI2

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6.6 Typical Characteristics

at TA = 25°C, VS = VSOUT = ±15V, VICM = VOCM = 0V, RL = 10kΩ, and G =1V/V (unless otherwise noted)

Input Referred Offset Voltage ( V)

-350

-250

-150

-50

150

250

350

N = 702

Mean = 11µV

Std. dev. = 31.1µV

G = 100V/V

Figure 6-1. Distribution of Offset Voltage (RTI)

Input Referred Offset Voltage drift ( V/ C)

-1

-0.75

-0.5

-0.25

0.25

0.5

0.75

N = 30

Mean = 0.022μV/°C

Std. dev. = 0.065μV/°C

G = 100V/V

Figure 6-2. Distribution of Offset Voltage Drift (RTI)

Input Referred Offset Voltage ( V)

-350

-250

-150

-50

150

250

350

N = 702

Mean = –4.7µV

Std. dev. = 66µV

G = 2V/V

Figure 6-3. Distribution of Offset Voltage (RTI)

Input Referred Offset Voltage drift ( V/ C)

-1

-0.75

-0.5

-0.25

0.25

0.5

0.75

N = 30

Mean = –0.02μV/°C

Std. dev. = 0.111μV/°C

G = 2V/V

Figure 6-4. Distribution of Offset Voltage Drift (RTI)

Input Referred Offset Voltage ( V)

-900

-600

-300

300

600

900

-1400

1400

N = 702

Mean = 20.9µV

Std. dev. = 253.1µV

G = 0.5V/V

Figure 6-5. Distribution of Offset Voltage (RTI)

Input Referred Offset Voltage drift ( V/ C)

-2

-1.6

-1.2

-0.8

-0.4

0.4

0.8

1.2

1.6

N = 30

Mean = 0.112μV/°C

Std. dev. = 0.393μV/°C

G = 0.5V/V

Figure 6-6. Distribution of Offset Voltage Drift (RTI)

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PGA854

SBOSAN2A – AUGUST 2025 – REVISED DECEMBER 2025

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