| Electronic Components Datasheet Search |
|
XM33C321ASPZR Datasheet(PDF) 41 Page - Texas Instruments |
|
|
|||||||||||||||||||||||||||||
XM33C321ASPZR Datasheet(HTML) 41 Page - Texas Instruments |
|
41 / 113 page ![]() 7.6 Flash Memory Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Supply VDDPGM/ERASE Program and erase supply voltage 1.71 3.6 V IDDERASE Supply current from VDD during erase operation Supply current delta 10 mA IDDPGM Supply current from VDD during program operation Supply current delta 10 mA Endurance NWEC(CODEFLASH) Erase/program cycle endurance (code flash) 20 k cycles NWEC(DATAFLASH) Erase/program cycle endurance (data flash) 100 k cycles NE(MAX) Total erase operations before failure (1) 802 k erase operations NW(MAX) Write operations per word line before sector erase (2) 83 write operations Retention tRET_85 Flash memory data retention -40°C <= Tj <= 85°C 60 years tRET_105 Flash memory data retention -40°C <= Tj <= 105°C 11.4 years tRET_130 Flash memory data retention -40°C <= Tj <= 130°C 2.4 years Program and Erase Timing tPROG (WORD, 128) Program time for flash word (3) (5) 75 µs tPROG (SEC, 128) Program time for 2kB sector (4) (5) 5.1 ms tERASE (SEC) Sector erase time <10k erase/program cycles 20 ms tERASE (BANK) Bank erase time <10k erase/program cycles 22 ms (1) Total number of cumulative erase operations supported by the flash before failure. A sector erase or bank erase operation is considered to be one erase operation. (2) Maximum number of write operations allowed per word line (256 bytes) before the word line must be erased. If additional writes to the same word line are required, a sector erase is required once the maximum number of write operations per word line is reached. (3) Program time is defined as the time from when the program command is triggered until the command completion interrupt flag is set in the flash controller. (4) Sector program time is defined as the time from when the first word program command is triggered until the final word program command completes and the interrupt flag is set in the flash controller. This time includes the time needed for software to load each flash word (after the first flash word) into the flash controller during programming of the sector. (5) Flash word size is 128 data bits (16 bytes). On devices with ECC, the total flash word size is 144 bits (128 data bits plus 16 ECC bits). 7.7 Power Supply Sequencing 7.7.1 Power Supply Ramp Figure 7-1 shows the relationships of POR-, POR+, BOR0-, and BOR0+ during powerup and powerdown. www.ti.com MSPM33C321A, MSPM33C3219 SLASFB6 – DECEMBER 2025 Copyright © 2025 Texas Instruments Incorporated Submit Document Feedback 41 Product Folder Links: MSPM33C321A MSPM33C3219 |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |