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XM33C321ASPZR Datasheet(PDF) 41 Page - Texas Instruments

Part # XM33C321ASPZR
Description  MSPM33C321x Mixed-Signal Microcontrollers
PDF  113 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

XM33C321ASPZR Datasheet(HTML) 41 Page - Texas Instruments

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7.6 Flash Memory Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Supply
VDDPGM/ERASE
Program and erase supply voltage
1.71
3.6
V
IDDERASE
Supply current from VDD during erase
operation
Supply current delta
10
mA
IDDPGM
Supply current from VDD during
program operation
Supply current delta
10
mA
Endurance
NWEC(CODEFLASH)
Erase/program cycle endurance (code
flash)
20
k cycles
NWEC(DATAFLASH)
Erase/program cycle endurance (data
flash)
100
k cycles
NE(MAX)
Total erase operations before failure (1)
802
k erase operations
NW(MAX)
Write operations per word line before
sector erase (2)
83
write operations
Retention
tRET_85
Flash memory data retention
-40°C <= Tj <= 85°C
60
years
tRET_105
Flash memory data retention
-40°C <= Tj <= 105°C
11.4
years
tRET_130
Flash memory data retention
-40°C <= Tj <= 130°C
2.4
years
Program and Erase Timing
tPROG (WORD, 128)
Program time for flash word (3) (5)
75
µs
tPROG (SEC, 128)
Program time for 2kB sector (4) (5)
5.1
ms
tERASE (SEC)
Sector erase time
<10k erase/program cycles
20
ms
tERASE (BANK)
Bank erase time
<10k erase/program cycles
22
ms
(1)
Total number of cumulative erase operations supported by the flash before failure. A sector erase or bank erase operation is
considered to be one erase operation.
(2)
Maximum number of write operations allowed per word line (256 bytes) before the word line must be erased. If additional writes to the
same word line are required, a sector erase is required once the maximum number of write operations per word line is reached.
(3)
Program time is defined as the time from when the program command is triggered until the command completion interrupt flag is set in
the flash controller.
(4)
Sector program time is defined as the time from when the first word program command is triggered until the final word program
command completes and the interrupt flag is set in the flash controller. This time includes the time needed for software to load each
flash word (after the first flash word) into the flash controller during programming of the sector.
(5)
Flash word size is 128 data bits (16 bytes). On devices with ECC, the total flash word size is 144 bits (128 data bits plus 16 ECC bits).
7.7 Power Supply Sequencing
7.7.1 Power Supply Ramp
Figure 7-1 shows the relationships of POR-, POR+, BOR0-, and BOR0+ during powerup and powerdown.
www.ti.com
MSPM33C321A, MSPM33C3219
SLASFB6 – DECEMBER 2025
Copyright © 2025 Texas Instruments Incorporated
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Product Folder Links: MSPM33C321A MSPM33C3219



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