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GD32H757ZMT7 Datasheet(PDF) 101 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD32H757ZMT7 Datasheet(HTML) 101 Page - GigaDevice Semiconductor (Beijing) Inc. |
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101 / 151 page ![]() GD32H757xx Datasheet 100 Table 4-20. High speed internal clock (IRC64M) characteristics Symbol Parameter Conditions Min Typ Max Unit fIRC64M High Speed Internal Oscillator (IRC64M) frequency VDD = 3.3 V — 64 — MHz DriftIRC64M IRC64M oscillator Frequency drift, Factory- trimmed VDD = VDDA = 3.3 V, TJ = -40 °C ~ +85 °C for grade 6 devices (1) — -0.19 ~ +0.85 — % VDD = VDDA = 3.3 V, TJ = -40 °C ~ +105 °C for grade 7 devices (1) — -0.27 ~ +0.85 — % VDD = VDDA = 3.3 V, TJ = 25 °C 63.68 — 64.32 MHz IRC64M oscillator Frequency accuracy, User trimming step(1) — — 0.23 — % DutyIRC64M(2) IRC64M oscillator duty cycle VDD = VDDA = 3.3 V 45 50 55 % IDDA(IRC64M)(1) IRC64M oscillator operating current — — 500 — μA tST(IRC64M)(1) IRC64M oscillator startup time — — 1.95 — μs (1) Value guaranteed by characterization, not 100% tested in production. (2) Value guaranteed by design, not 100% tested in production. |
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