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GD32H757ZMT7 Datasheet(PDF) 102 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD32H757ZMT7 Datasheet(HTML) 102 Page - GigaDevice Semiconductor (Beijing) Inc. |
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102 / 151 page ![]() GD32H757xx Datasheet 101 Table 4-21. Low power internal clock (LPIRC4M) characteristics Symbol Parameter Conditions Min Typ Max Unit fLPIRC4M High Speed Internal Oscillator (LPIRC4M) frequency VDD = 3.3 V — 4 — MHz ACCLPIRC4M LPIRC4M oscillator Frequency accuracy, Factory-trimmed VDD = VDDA = 3.3 V, TJ = -40 °C ~ +85 °C for grade 6 devices (1) — -0.96~ +1.02 — % VDD = VDDA = 3.3 V, TJ = -40 °C ~ +105 °C for grade 7 devices (1) — -1.06~ +1.02 — % VDD = VDDA = 3.3 V, TJ = 25 °C 3.96 — 4.04 MHz LPIRC4M oscillator Frequency accuracy, User trimming step(1) — — 0.4 — % DLPIRC4M(2) LPIRC4M oscillator duty cycle VDD = VDDA = 3.3 V 45 50 55 % IDDALPIRC4M(1) LPIRC4M oscillator operating current — — 30 — μA tSULPIRC4M(1) LPIRC4M oscillator startup time — — 1.64 — μs (1) Value guaranteed by characterization, not 100% tested in production. (2) Value guaranteed by design, not 100% tested in production. Table 4-22. Low speed internal clock (IRC32K) characteristics Symbol Parameter Conditions Min Typ Max Unit fIRC32K Low Speed Internal oscillator (IRC32K) frequency VDD = VDDA = 3.3 V, TJ = -40 °C ~ +85 °C 20 32(1) 40 kHz tSUIRC32K(2) IRC32K oscillator startup time — — 50.72 — μs (1) Value guaranteed by design, not 100% tested in production. (2) Value guaranteed by characterization, not 100% tested in production. 4.9. PLL characteristics Table 4-23. PLL0/1/2 characteristics (wide VCO frequency range) Symbol Parameter Conditions Min Typ Max Unit fPLLIN(1) PLL input clock frequency — 2 — 16 MHz PLL input clock duty cycle — 10 — 90 % fVCO(1) PLL VCO output clock frequency — 100 — 850 MHz tLOCK(2) PLL lock time — — 200 500 μs IDD(2) Current consumption on VCO freq = 800 MHz — 1.5 — mA |
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