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DRA752ABC Datasheet(PDF) 168 Page - Texas Instruments |
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DRA752ABC Datasheet(HTML) 168 Page - Texas Instruments |
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168 / 443 page ![]() 168 DRA756, DRA755, DRA754, DRA752 DRA751, DRA750, DRA746, DRA745, DRA744 SPRS950F – DECEMBER 2015 – REVISED MAY 2019 www.ti.com Submit Documentation Feedback Product Folder Links: DRA756 DRA755 DRA754 DRA752 DRA751 DRA750 DRA746 DRA745 DRA744 Specifications Copyright © 2015–2019, Texas Instruments Incorporated Table 5-9. Maximum Supported Frequency (continued) Module Clock Sources Instance Name Input Clock Name Clock Type Max. Clock Allowed (MHz) PRCM Clock Name PLL / OSC / Source Clock Name PLL / OSC / Source Name WD_TIMER2 WD_TIMER2_ICLK Int 38.4 WKUPAON_GICLK SYS_CLK1 OSC1 DPLL_ABE_X2_CL K DPLL_ABE WD_TIMER2_FCL K Func 0.032 WKUPAON_SYS_GFC LK WKUPAON_32K_G FCLK RTC Oscillator 5.6 Power Consumption Summary NOTE Maximum power consumption for this SoC depends on the specific use conditions for the end system. Contact your TI representative for assistance in estimating maximum power consumption for the end system use case. 5.7 Electrical Characteristics NOTE The data specified in Section 5.7.1 through Section 5.7.14 are subject to change. NOTE The interfaces or signals described in Section 5.7.1 through Section 5.7.14 correspond to the interfaces or signals available in multiplexing mode 0 (Function 1). All interfaces or signals multiplexed on the balls described in these tables have the same DC electrical characteristics, unless multiplexing involves a PHY/GPIO combination in which case different DC electrical characteristics are specified for the different multiplexing modes (Functions). 5.7.1 LVCMOS DDR DC Electrical Characteristics Table 5-10 summarizes the DC electrical characteristics for LVCMOS DDR Buffers. NOTE For more information on the I/O cell configurations (i[2:0], sr[1:0]), see the Chapter Control Module of the Device TRM. |
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