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DRA752ABC Datasheet(PDF) 171 Page - Texas Instruments |
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DRA752ABC Datasheet(HTML) 171 Page - Texas Instruments |
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171 / 443 page  171 DRA756, DRA755, DRA754, DRA752 DRA751, DRA750, DRA746, DRA745, DRA744 www.ti.com SPRS950F – DECEMBER 2015 – REVISED MAY 2019 Submit Documentation Feedback Product Folder Links: DRA756 DRA755 DRA754 DRA752 DRA751 DRA750 DRA746 DRA745 DRA744 Specifications Copyright © 2015–2019, Texas Instruments Incorporated Table 5-11. Dual Voltage LVCMOS I2C DC Electrical Characteristics (continued) PARAMETER MIN NOM MAX UNIT VIL Input low-level threshold 0.3*VDDS V Vhys Hysteresis 0.1*VDDS V IIN Input current at each I/O pin with an input voltage between 0.1*VDDS to 0.9*VDDS 12 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 12 µA CIN Input capacitance 10 pF VOL3 Output low-level threshold open-drain at 3-mA sink current 0.2*VDDS V IOLmin Low-level output current @VOL=0.2*VDDS 3 mA tOF Output fall time from VIHmin to VILmax with a bus capacitance CB from 10 pF to 400 pF 20+0.1*Cb 250 ns I2C Standard Mode – 3.3 V VIH Input high-level threshold 0.7*VDDS V VIL Input low-level threshold 0.3*VDDS V Vhys Hysteresis 0.05*VDDS V IIN Input current at each I/O pin with an input voltage between 0.1*VDDS to 0.9*VDDS 31 80 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 31 80 µA CIN Input capacitance 10 pF VOL3 Output low-level threshold open-drain at 3-mA sink current 0.4 V IOLmin Low-level output current @VOL=0.4V 3 mA IOLmin Low-level output current @VOL=0.6V for full drive load (400pF/400KHz) 6 mA tOF Output fall time from VIHmin to VILmax with a bus capacitance CB from 5 pF to 400 pF 250 ns I2C Fast Mode – 3.3 V VIH Input high-level threshold 0.7*VDDS V VIL Input low-level threshold 0.3*VDDS V Vhys Hysteresis 0.05*VDDS V IIN Input current at each I/O pin with an input voltage between 0.1*VDDS to 0.9*VDDSS 31 80 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 31 80 µA CIN Input capacitance 10 pF VOL3 Output low-level threshold open-drain at 3-mA sink current 0.4 V IOLmin Low-level output current @VOL=0.4V 3 mA IOLmin Low-level output current @VOL=0.6V for full drive load (400pF/400KHz) 6 mA |
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