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DRA752ABC Datasheet(PDF) 172 Page - Texas Instruments |
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DRA752ABC Datasheet(HTML) 172 Page - Texas Instruments |
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172 / 443 page  172 DRA756, DRA755, DRA754, DRA752 DRA751, DRA750, DRA746, DRA745, DRA744 SPRS950F – DECEMBER 2015 – REVISED MAY 2019 www.ti.com Submit Documentation Feedback Product Folder Links: DRA756 DRA755 DRA754 DRA752 DRA751 DRA750 DRA746 DRA745 DRA744 Specifications Copyright © 2015–2019, Texas Instruments Incorporated Table 5-11. Dual Voltage LVCMOS I2C DC Electrical Characteristics (continued) PARAMETER MIN NOM MAX UNIT tOF Output fall time from VIHmin to VILmax with a bus capacitance CB from 10 pF to 200 pF (Proper External Resistor Value should be used as per I2C spec) 20+0.1*Cb 250 ns Output fall time from VIHmin to VILmax with a bus capacitance CB from 300 pF to 400 pF (Proper External Resistor Value should be used as per I2C spec) 40 290 (1) VDDS stands for corresponding power supply (that is vddshv3). For more information on the power supply name and the corresponding ball, see Table 4-2, POWER [11] column. 5.7.4 IQ1833 Buffers DC Electrical Characteristics Table 5-12 summarizes the DC electrical characteristics for IQ1833 Buffers. Table 5-12. IQ1833 Buffers DC Electrical Characteristics PARAMETER MIN NOM MAX UNIT Signal Names in MUXMODE 0: tclk; Balls: E20; 1.8-V Mode VIH Input high-level threshold (Does not meet JEDEC VIH) 0.75 * VDDS V VIL Input low-level threshold (Does not meet JEDEC VIL) 0.25 * VDDS V VHYS Input hysteresis voltage 100 mV IIN Input current at each I/O pin 2 11 µA CPAD Pad capacitance (including package capacitance) 1 pF 3.3-V Mode VIH Input high-level threshold (Does not meet JEDEC VIH) 2.0 V VIL Input low-level threshold (Does not meet JEDEC VIL) 0.6 V VHYS Input hysteresis voltage 400 mV IIN Input current at each I/O pin 5 11 µA CPAD Pad capacitance (including package capacitance) 1 pF (1) VDDS stands for corresponding power supply (that is vddshv3). For more information on the power supply name and the corresponding ball, see Table 4-2, POWER [11] column. 5.7.5 IHHV1833 Buffers DC Electrical Characteristics Table 5-13 summarizes the DC electrical characteristics for IHHV1833 Buffers. Table 5-13. IHHV1833 Buffers DC Electrical Characteristics PARAMETER MIN NOM MAX UNIT Signal Names in MUXMODE 0: porz / rtc_iso / rtc_porz / wakeup [3:0]; Balls: F22 / AF14 / AB17 / AD17 / AC17 / AB16 / AC16; 1.8-V Mode VIH Input high-level threshold 1.2 V VIL Input low-level threshold 0.4 V VHYS Input hysteresis voltage 40 mV IIN Input current at each I/O pin 0.02 1 µA CPAD Pad capacitance (including package capacitance) 1 pF |
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