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DRA752ABC Datasheet(PDF) 174 Page - Texas Instruments |
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DRA752ABC Datasheet(HTML) 174 Page - Texas Instruments |
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174 / 443 page  174 DRA756, DRA755, DRA754, DRA752 DRA751, DRA750, DRA746, DRA745, DRA744 SPRS950F – DECEMBER 2015 – REVISED MAY 2019 www.ti.com Submit Documentation Feedback Product Folder Links: DRA756 DRA755 DRA754 DRA752 DRA751 DRA750 DRA746 DRA745 DRA744 Specifications Copyright © 2015–2019, Texas Instruments Incorporated Table 5-16. BMLB18 Buffers DC Electrical Characteristics PARAMETER MIN NOM MAX UNIT Signal Names in MUXMODE 0: mlbp_dat_n / mlbp_dat_p / mlbp_sig_n / mlbp_sig_p; Balls: AA2 / AA1 / AC2 / AC1; 1.8-V Mode VIH/VIL Input high-level threshold VCM ± 50mV V VHYS Input hysteresis voltage NONE mV VOD Differential output voltage (measured with 50ohm resistor between PAD and PADN) 300 500 mV VCM Common mode output voltage 1 1.5 V CPAD Pad capacitance (including package capacitance) 4 pF (1) VDDS stands for corresponding power supply (that is vdds_mlbp). For more information on the power supply name and the corresponding ball, see Table 4-2, POWER [11] column. 5.7.9 BC1833IHHV Buffers DC Electrical Characteristics Table 5-17 summarizes the DC electrical characteristics for BC1833IHHV Buffers. Table 5-17. BC1833IHHV Buffers DC Electrical Characteristics PARAMETER MIN NOM MAX UNIT Signal Names in MUXMODE 0: on_off; Balls: Y11; 1.8-V Mode VOH Output high-level threshold (IOH = 2 mA) VDDS- 0.45 V VOL Output low-level threshold (IOL = 2 mA) 0.45 V IDRIVE Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V 6 mA IIN Input current at each I/O pin 6 12 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 6 µA CPAD Pad capacitance (including package capacitance) 4 pF 3.3-V Mode VOH Output high-level threshold (IOH =100µA) VDDS-0.2 V VOL Output low-level threshold (IOL = 100µA) 0.2 V IDRIVE Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V 6 mA IIN Input current at each I/O pin 60 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 60 µA CPAD Pad capacitance (including package capacitance) 4 pF (1) VDDS stands for corresponding power supply (that is vddshv5). For more information on the power supply name and the corresponding ball, see Table 4-2, POWER [11] column. 5.7.10 USBPHY DC Electrical Characteristics NOTE USB1 instance is compliant with the USB3.0 SuperSpeed Transmitter and Receiver Normative Electrical Parameters as defined in the USB3.0 Specification Rev 1.0 dated Jun 6, 2011. |
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