L6711 datasheet(45/50 Pages) STMICROELECTRONICS

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L6711

Layout guidelines

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18.2

Power connections related.

Figure 24 shows some small signal components placement.

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Gate and phase traces must be sized according to the driver RMS current delivered to

the power mosfet. The device robustness allows managing applications with the power

section far from the controller without losing performances. Anyway, when possible, it is

suggested to minimize the distance between controller and power section.

In addition, since the PHASEx pin is the return path for the high side driver, this pin

might be connected directly to the High Side mosfet Source pin to have a proper driving

for this mosfet. For the LS mosfets, the return path is the PGNDx pin: it can be

connected directly to the power ground plane.

●

Bootstrap capacitor must be placed as close as possible to the BOOTx and PHASEx

pins to minimize the loop that is created.

●

Decoupling capacitor from VCC and SGND placed as close as possible to the involved

pins.

●

Decoupling capacitor from VCCDRx and PGNDx placed as close as possible to those

pins. This capacitor sustains the peak currents requested by the low-side mosfet

drivers.

●

Sensible components must be referred to SGND (when present): frequency set-up

resistor ROSC, offset resistor ROFFSET, TC resistor RTC and OVP resistor ROVP.

●

Star grounding: Connect SGND to PGND plane in a single point to avoid that drops due

to the high current delivered causes errors in the device behavior.

●

An additional ceramic capacitor is suggested to place near HS mosfet drain. This helps

in reducing HF noise.

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VSEN pin filtered vs. SGND helps in reducing noise injection into device.

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OUTEN pin filtered vs. SGND helps in reducing false trip due to coupled noise: take

care in routing driving net for this pin in order to minimize coupled noise.

●

PHASE pin spikes. Since the HS mosfet switches hardly, heavy voltage spikes can be

observed on the PHASEx pins. If these voltage spikes overcome the max breakdown

voltage of the pin, the device can absorb energy and it can cause damages. The

voltage spikes must be limited by proper layout; by the use of gate resistors, Schottky

diodes in parallel to the low side mosfets and/or snubber network on the low side

mosfets, and cannot overcome 26V, for 20nSec, at FSW = 600kHz.

●

Boot Capacitor Extra Charge. Systems that do not use Schottky diodes might show big

negative spikes on the phase pin. This spike can be limited as well as the positive spike

but has an additional consequence: it causes the bootstrap capacitor to be over-

charged. This extra-charge can cause, in the worst case condition of maximum input

voltage and during particular transients, that boot-to-phase voltage overcomes the abs.

max. ratings also causing device failures. It is then suggested in this cases to limit this

extra-charge by adding a small resistor in series to the boot diode (one resistor can be

enough for all the three diodes if placed upstream the diode anode, see Figure 23).

L6711 Datasheet(PDF) 45 Page - STMicroelectronics

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