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MIC5013 Datasheet(PDF) 9 Page - Micrel Semiconductor

Part # MIC5013
Description  Protected High- or Low-Side MOSFET Driver
PDF  15 Pages
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Manufacturer  MICREL [Micrel Semiconductor]
Direct Link  http://www.micrel.com
Logo MICREL - Micrel Semiconductor

MIC5013 Datasheet(HTML) 9 Page - Micrel Semiconductor

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July 2005
9
MIC5013
MIC5013
Micrel, Inc.
Applications Information (Continued)
(using TAB and SOURCE for forcing, and SENSE and
KELVIN for sensing) is the best method of evaluating “R.”
Alternatively, “R” can be estimated for large MOSFETs
(RDS(ON) ≤ 100mΩ) by simply halving the stated RDS(ON),
or by subtracting 20 to 50mΩ from the stated RDS(ON) for
smaller MOSFETs.
High-Side Driver with Current Sensing MOSFET (Figure
5). The design starts by determining the value of “S” and
“R” for the MOSFET (use the guidelines described for the
low-side version). Let VTRIP = 100mV, and calculate RS for
a desired trip current. Next calculate RTH and R1. The trip
point is somewhat reduced when the output is at ground as
the voltage drop across R1 is zero. No clamping is required
for inductive loads, but may be added to reduce power dis-
sipation in the MOSFET.
Typical Applications
Start-up into a Dead Short. If the MIC5013 attempts to turn
on a MOSFET when the load is shorted, a very high current
flows. The over-current shutdown will protect the MOSFET,
but only after a time delay of 5 to 10µs. The MOSFET must
be capable of handling the overload; consult the device’s
SOA curve. If a short circuit causes the MOSFET to exceed
its 10µs SOA, a small inductance in series with the source
can help limit di/dt to control the peak current during the 5
to 10µs delay.
When testing short-circuit behavior, use a current probe
rated for both the peak current and the high di/dt.
The over-current shutdown delay varies with comparator
overdrive, owing to noise filtering in the comparator.Adelay
ofupto100µscanbeobservedatthethresholdofshutdown.
A 20% overdrive reduces the delay to near minimum.
Incandescent Lamps. The cold filament of an incandes-
cent lamp exhibits less than one-tenth as much resistance
as when the filament is hot. The initial turn-on current of
a #6014 lamp is about 70A, tapering to 4.4A after a few
hundred milliseconds. It is unwise to set the over-current
trip point to 70A to accommodate such a load. A “resistive”
short that draws less than 70A could destroy the MOSFET
by allowing sustained, excessive dissipation. If the over-
current trip point is set to less than 70A, the MIC5013 will
not start a cold filament. The solution is to start the lamp
with a high trip point, but reduce this to a reasonable value
after the lamp is hot.
The MIC5013 over-current shutdown circuit is designed to
handle this situation by varying the trip point with time (see
Figure 5). RTH1 functions in the conventional manner, pro-
viding a current limit of approximately twice that required by
the lamp. RTH2 acts to increase the current limit at turn-on
to approximately 10 times the steady-state lamp current.
The high initial trip point decays away according to a 20ms
time constant contributed by CTH. RTH2 could be eliminated
with CTH working against the internal 1kΩ resistor, but this
results in a very high over-current threshold. As a rule of
thumb design the over-current circuitry in the conventional
manner, then add the RTH2/CTH network to allow for lamp
start-up. Let RTH2 = (RTH1÷10)–1kΩ, and choose a capaci-
tor that provides the desired time constant working against
RTH2 and the internal 1kΩ resistor.
When the MIC5013 is turned off, the threshold pin (2) ap-
pears as an open circuit, and CTH is discharged through
RTH1 and RTH2. This is much slower than the turn-on time
constant, and it simulates the thermal response of the fila-
ment. If the lamp is pulse-width modulated, the current limit
will be reduced by the residual charge left in CTH.
ModifyingSwitchingTimes.Donotaddexternalcapacitors
to the gate to slow down the switching time. Add a resistor
(1kΩ to 51kΩ) in series with the gate of the MOSFET to
achieve this result.
Bootstrapped High-Side Driver (Figure 6). The speed
of a high-side driver can be increased to better than 10µs
by bootstrapping the supply off of the MOSFET source.
This topology can be used where the load is pulse-width
modulated (100Hz to 20kHz), or where it is energized
Fault
V+
Gate
1
2
3
4
8
MIC5013
Gnd
7
6
5
Thresh
Sense
Source
Input
12V
IRCZ44
10µF
43Ω
R1
3.9kΩ
Control Input
+
#6014
22kΩ
R
TH1
CTH
22µF
1kΩ
R
TH2
Fault
V+
Gate
1
2
3
4
8
MIC5013
Gnd
7
6
5
Thresh
Sense
Source
Input
IRF540
10µF
20kΩ
Control Input
+
100Ω
R
18mΩ
LOAD
R2
100nF
1N4001 (2)
1N5817
7 to 15V
+
V
1mA
R1=
S
RTH
Figure 5. Time-Variable
Trip Threshold
Figure 6. Bootstrapped
High-Side Driver



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