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MIC5013 Datasheet(PDF) 9 Page - Micrel Semiconductor |
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MIC5013 Datasheet(HTML) 9 Page - Micrel Semiconductor |
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9 / 15 page ![]() July 2005 9 MIC5013 MIC5013 Micrel, Inc. Applications Information (Continued) (using TAB and SOURCE for forcing, and SENSE and KELVIN for sensing) is the best method of evaluating “R.” Alternatively, “R” can be estimated for large MOSFETs (RDS(ON) ≤ 100mΩ) by simply halving the stated RDS(ON), or by subtracting 20 to 50mΩ from the stated RDS(ON) for smaller MOSFETs. High-Side Driver with Current Sensing MOSFET (Figure 5). The design starts by determining the value of “S” and “R” for the MOSFET (use the guidelines described for the low-side version). Let VTRIP = 100mV, and calculate RS for a desired trip current. Next calculate RTH and R1. The trip point is somewhat reduced when the output is at ground as the voltage drop across R1 is zero. No clamping is required for inductive loads, but may be added to reduce power dis- sipation in the MOSFET. Typical Applications Start-up into a Dead Short. If the MIC5013 attempts to turn on a MOSFET when the load is shorted, a very high current flows. The over-current shutdown will protect the MOSFET, but only after a time delay of 5 to 10µs. The MOSFET must be capable of handling the overload; consult the device’s SOA curve. If a short circuit causes the MOSFET to exceed its 10µs SOA, a small inductance in series with the source can help limit di/dt to control the peak current during the 5 to 10µs delay. When testing short-circuit behavior, use a current probe rated for both the peak current and the high di/dt. The over-current shutdown delay varies with comparator overdrive, owing to noise filtering in the comparator.Adelay ofupto100µscanbeobservedatthethresholdofshutdown. A 20% overdrive reduces the delay to near minimum. Incandescent Lamps. The cold filament of an incandes- cent lamp exhibits less than one-tenth as much resistance as when the filament is hot. The initial turn-on current of a #6014 lamp is about 70A, tapering to 4.4A after a few hundred milliseconds. It is unwise to set the over-current trip point to 70A to accommodate such a load. A “resistive” short that draws less than 70A could destroy the MOSFET by allowing sustained, excessive dissipation. If the over- current trip point is set to less than 70A, the MIC5013 will not start a cold filament. The solution is to start the lamp with a high trip point, but reduce this to a reasonable value after the lamp is hot. The MIC5013 over-current shutdown circuit is designed to handle this situation by varying the trip point with time (see Figure 5). RTH1 functions in the conventional manner, pro- viding a current limit of approximately twice that required by the lamp. RTH2 acts to increase the current limit at turn-on to approximately 10 times the steady-state lamp current. The high initial trip point decays away according to a 20ms time constant contributed by CTH. RTH2 could be eliminated with CTH working against the internal 1kΩ resistor, but this results in a very high over-current threshold. As a rule of thumb design the over-current circuitry in the conventional manner, then add the RTH2/CTH network to allow for lamp start-up. Let RTH2 = (RTH1÷10)–1kΩ, and choose a capaci- tor that provides the desired time constant working against RTH2 and the internal 1kΩ resistor. When the MIC5013 is turned off, the threshold pin (2) ap- pears as an open circuit, and CTH is discharged through RTH1 and RTH2. This is much slower than the turn-on time constant, and it simulates the thermal response of the fila- ment. If the lamp is pulse-width modulated, the current limit will be reduced by the residual charge left in CTH. ModifyingSwitchingTimes.Donotaddexternalcapacitors to the gate to slow down the switching time. Add a resistor (1kΩ to 51kΩ) in series with the gate of the MOSFET to achieve this result. Bootstrapped High-Side Driver (Figure 6). The speed of a high-side driver can be increased to better than 10µs by bootstrapping the supply off of the MOSFET source. This topology can be used where the load is pulse-width modulated (100Hz to 20kHz), or where it is energized Fault V+ Gate 1 2 3 4 8 MIC5013 Gnd 7 6 5 Thresh Sense Source Input 12V IRCZ44 10µF 43Ω R1 3.9kΩ Control Input + #6014 22kΩ R TH1 CTH 22µF 1kΩ R TH2 Fault V+ Gate 1 2 3 4 8 MIC5013 Gnd 7 6 5 Thresh Sense Source Input IRF540 10µF 20kΩ Control Input + 100Ω R 18mΩ LOAD R2 100nF 1N4001 (2) 1N5817 7 to 15V + V 1mA R1= S RTH Figure 5. Time-Variable Trip Threshold Figure 6. Bootstrapped High-Side Driver |
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