M63155FP

Rev.1.0, Sep.16.2003, page 13 of 40

Electrical characteristics

(Unless otherwise noted Ta=25°C, VM=12V, VCC1=VCC2=5V)

PWM

50%

50%

0V

5V

90%

10%

VA(*Note3)

0V

Ton

Tr

Toff

Tf

Fig.3 Gate Drive Output Time Characteristics Definition

* Note2 : Vout is the external Nch MOS FET 's gate-source voltage. The definition is, UT-U, VT-V, WT-W, and

U=V=W=VM=12V, Capacitor Load CL=1200pF. UB-RS, VB-RS, WB-RS, and RS=0V, Capacitor Load

CL=1200pF.

* Note3 : VA is the power supply voltage of the gate drive output. The definition is, VGT-VM=10.8V for UT-U, VT-

V, WT-W. VGB=12.2V for UB-RS, VB-RS, WB-RS.

* Note4 : The waveform above-mentioned is one of the switching timing, because an gate drive output state is due to

Hall sensor Amp. inputs. Please refer to the "Hall Signal Inputs and Motor Outputs Timing Diagram".