TDA8950 datasheet(12/39 Pages) NXP

12 / 39 page

TDA8950_1

Preliminary data sheet

Rev. 01 — 9 September 2008

12 of 39

NXP Semiconductors

TDA8950

× 150 W class-D power ampliﬁer

Limiting values

10. Thermal characteristics

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

supply voltage

non-operating mode; VDD − VSS

-90

IORM

repetitive peak

output current

maximum output current limiting

9.2

Tstg

storage temperature

−55

+150

°C

Tamb

ambient temperature

−40

+85

°C

junction temperature

150

°C

VMODE

voltage on pin

MODE

referenced to SGND

VOSC

voltage on pin OSC

SGND

+ 6

input voltage

referenced to SGND; pin IN1P; IN1M;

IN2P and IN2M

−5+5

VPROT

voltage on pin PROT referenced to voltage on pin VSSD

Vesd

electrostatic

discharge voltage

Human Body Model (HBM);

pin VSSP1 with respect to other pins

−1800 +1800 V

HBM; all other pins

−2000 +2000 V

Machine Model (MM); all pins

−200

+200

Charged Device Model (CDM)

−500

+500

Iq(tot)

total quiescent

current

Operating mode; no load; no ﬁlter; no

RC-snubber network connected

-75

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-a)

thermal resistance from junction to ambient

in free air

K/W

Rth(j-c)

thermal resistance from junction to case

1.1

K/W

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