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LT3758 Datasheet(PDF) 20 Page - Linear Technology

Part # LT3758
Description  High Input Voltage, Boost, Flyback, SEPIC and Inverting Controller
PDF  36 Pages
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LT3758 Datasheet(HTML) 20 Page - Linear Technology

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LT3758
20
3758f
APPLICATIONS INFORMATION
Flyback Converter: Transformer Design for
Discontinuous Mode Operation
The transformer design for discontinuous mode of opera-
tion is chosen as presented here. According to Figure 8,
the minimum D3 (D3MIN) occurs when the the converter
has the minimum VIN and the maximum output power
(POUT). Choose D3MIN to be equal to or higher than 10%
to guarantee the converter is always in discontinuous
mode operation. Choosing higher D3 allows the use of
low inductances but results in higher switch peak current.
The user can choose a DMAX as the start point. Then, the
maximum average primary currents can be calculated by
the following equation:
II
P
DV
LP MAX
SW MAX
OUT MAX
MAX
IN MIN
()
()
()
()
••
==
η
where
η is the converter efficiency.
If the flyback converter has multiple outputs, POUT(MAX)
is the sum of all the output power.
The maximum average secondary current is:
II
I
D
LS MAX
D MAX
OUT MAX
()
()
()
==
2
where
D2 = 1 – DMAX – D3
the primary and secondary RMS currents are:
II
D
II
LP RMS
LP MAX
MAX
LS RMS
LS MAX
()
()
()
(
••
•
=
=
2
3
2
)) •
D2
3
According to Figure 8, the primary and secondary peak
currents are:
ILP(PEAK) = ISW(PEAK) = 2 • ILP(MAX)
ILS(PEAK) = ID(PEAK) = 2 • ILS(MAX)
The primary and second inductor values of the flyback
converter transformer can be determined using the fol-
lowing equations:
L
DV
Pf
L
DV
P
MAX
IN MAX
OUT MAX
S
O
=
=
22
2
2
2
••
••
•(
()
()
η
U
UT
D
OUT MAX
V
If
+ )
••
()
2
The primary to second turns ratio is:
N
N
L
L
P
S
P
S
=
Flyback Converter: Snubber Design
Transformer leakage inductance (on either the primary or
secondary) causes a voltage spike to occur after the MOS-
FET turn-off. This is increasingly prominent at higher load
currents, where more stored energy must be dissipated.
In some cases a snubber circuit will be required to avoid
overvoltage breakdown at the MOSFET’s drain node. There
are different snubber circuits, and Application Note 19 is
a good reference on snubber design. An RCD snubber is
shown in Figure 7.
The snubber resistor value (RSN) can be calculated by the
following equation:
R
VV
V
N
N
IL
f
SN
SN
SN
OUT
P
S
SW PEAK
LK
=
−
2
2
2
•
••
••
()
where VSN is the snubber capacitor voltage. A smaller
VSN results in a larger snubber loss. A reasonable VSN is
2 to 2.5 times of:
VN
N
OUT
P
S
•



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