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34825 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

Part # 34825
Description  Micro-USB Interface IC Supporting Universal Charging Solution and Wired Accessories
PDF  39 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

34825 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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Analog Integrated Circuit Device Data
6
Freescale Semiconductor
34825
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions VDD = 3.6 V, VBUS = 5.0 V, VDDIO = 3.0 V, -40°C ≤ TA ≤ 85°C (see Figure 1), unless
otherwise noted. Typical values noted reflect the approximate parameter means at VDD = 3.6 V and TA = 25°C under nominal
conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER INPUT
VDD Supply Voltage
VDD
2.7
-
5.5
V
VDD Power-On-Reset Threshold
Rising edge
Hysteresis
VVDDPOR
-
-
2.5
100
2.65
-
V
mV
VDD Quiescent Current
In Standby mode
In Power Save mode
In Active mode (VDD < VBUS)
In Active mode (VDD > VBUS)
IVDD
-
-
-
-
9.0
16
550
850
12
22
650
1000
μA
VBUS Supply Voltage
VBUS
2.8
5.0
28
V
VBUS Detection Threshold Voltage
Rising edge
Hysteresis
VBUS_DET
-
-
2.65
150
2.80
-
V
mV
VBUS Supply Quiescent Current
In VBUS Power mode
In Active mode - Dedicated Charger
In Active mode - power MOSFET is off (VBUS < VDD)
IVBUS
-
-
-
-
-
-
1.2
1.2
0.5
mA
mA
μA
VBUS Over-voltage Protection Threshold
Rising edge
Hysteresis
VBUS_OVP
6.8
-
7.0
150
7.2
-
V
mV
VBUS Over-current Protection Threshold
Triggering threshold (at onset of OTP shutoff)
IBUS_OCP
1.2
1.8
2.2
A
Over-temperature Protection Threshold
Rising threshold
Falling threshold
TOTP
115
-
130
95
145
-
°C
VDDIO Supply Voltage
VDDIO
1.65
-
3.6
V
SWITCH
ISET Open-Drain Output MOSFET
On resistance (loaded by 3.0 mA current)
Leakage current (when the MOSFET is off at 5.0 V bias voltage)
RISETB
IISET_OFF
-
-
-
-
100
0.5
Ω
μA
OUT Pin Discharge MOSFET(1)
On resistance (loaded by 3.0 mA current)
Leakage current (when the MOSFET is off at 5.0 V bias voltage)
ROUT_DISC
IOUT_OFF
-
-
-
0.5
100
-
Ω
μA
Power MOSFET
On resistance (when VBUS = 5.0 V, TA< 50°C)
RPSW
-
200
250
m
Ω



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