BLF145 datasheet(4/15 Pages) NXP

4 / 15 page

NXP Semiconductors

Product speciﬁcation

HF power MOS transistor

BLF145

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

V(BR)DSS

drain-source breakdown voltage

ID = 10 mA; VGS = 0

−−

IDSS

drain-source leakage current

VGS = 0; VDS = 28 V

−−

2mA

IGSS

gate-source leakage current

VGS = ±20 V; VDS = 0

−−

µA

VGSth

gate-source threshold voltage

ID = 10 mA; VDS = 10 V

−

4.5

∆V

gate-source voltage difference of

matched devices

ID = 10 mA; VDS = 10 V

−−

100

gfs

forward transconductance

ID = 1.5 A; VDS = 10 V

1.2

−−

RDSon

drain-source on-state resistance

ID = 1.5 A; VGS = 10 V

−

0.4

0.75

Ω

IDSX

on-state drain current

VGS = 10 V; VDS = 10 V

−

Cis

input capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

125

−

Cos

output capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

Crs

feedback capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

VGS group indicator

GROUP

LIMITS

(V)

GROUP

LIMITS

(V)

MIN.

MAX.

MIN.

MAX.

2.0

2.1

3.3

3.4

2.1

2.2

3.4

3.5

2.2

2.3

3.5

3.6

2.3

2.4

3.6

3.7

2.4

2.5

3.7

3.8

2.5

2.6

3.8

3.9

2.6

2.7

3.9

4.0

2.7

2.8

4.0

4.1

2.8

2.9

4.1

4.2

2.9

3.0

4.2

4.3

3.0

3.1

4.3

4.4

3.1

3.2

4.4

4.5

3.2

3.3

Rev. 04 - 5 January 2007

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