BLF145 datasheet(5/15 Pages) NXP

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NXP Semiconductors

Product speciﬁcation

HF power MOS transistor

BLF145

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current; typical

values.

VDS =10V.

handbook, halfpage

−6

MGP036

102

103

104

−4

−2

T.C.

(mV/K)

ID (mA)

Fig.5

Drain current as a function of gate-source

voltage; typical values.

VDS =10V.

handbook, halfpage

(A)

VGS (V)

MGP037

125

°C

Tj = 25 °C

Fig.6

Drain-source on-state resistance as a

function of junction temperature; typical

values.

ID = 1.5 A;

VGS =10V.

handbook, halfpage

040

RDS(on)

(

Ω)

Tj (°C)

160

0.8

0.6

0.2

0.4

120

MGP038

Fig.7

Input and output capacitance as functions

of drain-source voltage; typical values.

VGS = 0; f = 1 MHz.

handbook, halfpage

010

240

180

120

MGP039

(pF)

VDS (V)

Cos

Cis

Rev. 04 - 5 January 2007

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