BLF145 datasheet(7/15 Pages) NXP

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NXP Semiconductors

Product speciﬁcation

HF power MOS transistor

BLF145

APPLICATION INFORMATION FOR CLASS-A OPERATION

Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 26 Ω; unless otherwise speciﬁed.

RF performance in SSB operation in a common source class-A circuit.

Note

1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope

power the values should be decreased by 6 dB.

MODE OF

OPERATION

(MHz)

VDS

(V)

(A)

(W)

(dB)

(dB)(1)

(

Ω)

SSB, class-A

1.3

8 (PEP)

>24

typ. 27

>−40

typ.

−43

<−40

typ.

−70

18.4

+ j5.2

Fig.9

Power gain as a function of load power;

typical values.

Class-A operation; VDS = 28 V; ID = 1.3 A;

Rth mb-h = 0.3 K/W; f = 28 MHz.

solid line: Th =25 °C.

dotted line: Th =70 °C.

handbook, halfpage

MGP040

(dB)

PL (W) PEP

Fig.10 Third order intermodulation distortion as a

function of load power; typical values.

Class-A operation; VDS = 28 V; ID = 1.3 A;

Rth mb-h = 0.3 K/W; f = 28 MHz.

solid line: Th =25 °C.

dotted line: Th =70 °C.

handbook, halfpage

010

−20

−30

−50

−60

−40

MGP041

(dB)

PL (W) PEP

Rev. 04 - 5 January 2007

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