BLF145 datasheet(11/15 Pages) NXP

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NXP Semiconductors

Product speciﬁcation

HF power MOS transistor

BLF145

Fig.15 Third order intermodulation distortion as a

function of load power, typical values.

Class-AB operation; VDS = 28 V; IDQ = 0.25 A;

Rth mb-h = 0.3 K/W; f = 28 MHz.

solid line: Th =25 °C.

dotted line: Th =70 °C.

handbook, halfpage

−20

−30

−40

−50

MGP046

(dB)

PL (W)

Fig.16 Fifth order intermodulation distortion as a

function of load power, typical values.

Class-AB operation; VDS = 28 V; IDQ = 0.25 A;

Rth mb-h = 0.3 K/W; f = 28 MHz.

solid line: Th =25 °C.

dotted line: Th =70 °C.

handbook, halfpage

−20

−30

−40

−50

MGP047

(dB)

PL (W)

Table 1

Input impedance as a function of frequency

Class-AB operation; VDS =28V; IDQ = 0.25 A; PL =30W;

Th =25 °C; Rth mb-h = 0.3 K/W; R1 = 34 Ω;

ZL = 8.9 + j1 Ω.

Fig.17 Power gain as a function of frequency,

typical values.

Class-AB operation; VDS = 28 V; IDQ = 0.25 A;

PL = 30 W; Th =25 °C; Rth mb-h = 0.3 K/W;

R1 =34 Ω;ZL = 8.9 + j1 Ω.

handbook, halfpage

030

MGP048

121824

(dB)

f (MHz)

(MHz)

(

Ω)

1.5

32.9

− j2.2

3.0

32.4

− j4.3

6.0

30.7

− j8.1

27.4

− j11.9

32.9

− j14.6

18.5

− j15.4

15.1

− j15.3

12.5

− j14.6

Rev. 04 - 5 January 2007

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