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ADG5213 Datasheet(PDF) 4 Page - Analog Devices |
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ADG5213 Datasheet(HTML) 4 Page - Analog Devices |
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4 / 20 page  ADG5212/ADG5213 Rev. 0 | Page 4 of 20 ±20 V DUAL SUPPLY VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted. Table 2. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range VDD to VSS V max On Resistance, RON 140 Ω typ VS = ±15 V, IS = −1 mA, see Figure 24 160 200 230 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match Between Channels, ∆RON 1.5 Ω typ VS = ±15 V, IS = −1 mA 8 9 10 Ω max On-Resistance Flatness, RFLAT(ON) 33 Ω typ VS = ±15 V, IS = −1 mA 45 55 60 Ω max LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V Source Off Leakage, IS (Off ) 0.01 nA typ VS = ±15 V, VD = ∓15 V, see Figure 23 0.1 0.2 0.4 nA max Drain Off Leakage, ID (Off ) 0.01 nA typ VS = ±15 V, VD = ∓15 V, see Figure 23 0.1 0.2 0.4 nA max Channel On Leakage, ID (On), IS (On) 0.02 nA typ VS = VD = ±15 V, see Figure 26 0.2 0.25 0.9 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 μA typ VIN = VGND or VDD ±0.1 μA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 tON 155 ns typ RL = 300 Ω, CL = 35 pF 195 235 255 ns max VS = 10 V, see Figure 30 tOFF 145 ns typ RL = 300 Ω, CL = 35 pF 165 185 210 ns max VS = 10 V, see Figure 30 Break-Before-Make Time Delay, tD (ADG5213 Only) 35 ns typ RL = 300 Ω, CL = 35 pF 20 ns min VS1 = VS2 = 10 V, see Figure 29 Charge Injection, QINJ −0.5 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 31 Off Isolation −105 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 25 Channel-to-Channel Crosstalk −105 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 27 −3 dB Bandwidth 460 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 28 Insertion Loss −6 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 28 CS (Off ) 2.8 pF typ VS = 0 V, f = 1 MHz CD (Off ) 4.8 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) 8 pF typ VS = 0 V, f = 1 MHz |
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