LH28F008SC datasheet(8/38 Pages) SHARP

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LH28F008SC

8M (1M × 8) Flash Memory

BUS OPERATIONS

MODE

ADDRESS

0 - DQ7

»/BY »

NOTE

Read

IH or VHH

OUT

1, 2, 3

Output Disable

IH or VHH

High-Z

Standby

IH or VHH

High-Z

Deep Power Down

High-Z

Read Identifier Codes V

IH or VHH

See Figure 5

Note 5

Write

IH or VHH

3, 6, 7

NOTES:

1. Refer to DC Characteristics. When VPP ≤ VPPLK, memory contents can be read, but not altered.

2. X can be VIL or VIH for control pins and addresses, and VPPLK or VPPH1/2/3 for VPP. See DC Characteristics for

VPPLK and VPPH1/2/3 voltages.

3. RY

»/BY » is VOL when the WSM is executing internal block erase, byte write, or lock-bit configuration algorithms. It is VOH during when

the WSM is not busy, in block erase suspend mode (with byte write inactive), byte write suspend mode, or deep power-down mode.

4. RP

» at GND ± 0.2 V ensures the lowest deep power-down current.

5. See Read Identifier Codes Command Section for read identifier code data.

6. Command writes involving block erase, write, or lock-bit configuration are reliably executed when VPP = VPPH1/2/3 and VCC = VCC1/2/3.

Block erase, byte write, or lock-bit configuration with VIH < RP » < VHH produce spurious results and should not be attempted.

7. Refer to Command Definitions Table for valid DIN during a write operation.

LH28F008SC Datasheet(PDF) 8 Page - Sharp Corporation