LH28F008SC

8M (1M × 8) Flash Memory

24

DC CHARACTERISTICS (Continued)

SYM.

PARAMETER

V

V

UNIT

TEST CONDITIONS

NOTE

MIN.

MAX.

MIN.

MAX.

V

IL

Input Low Voltage

-0.5

0.8

-0.5

0.8

V

7

V

IH

Input High Voltage

2.0

V

2.0

V

V

7

V

OL

Output Low Voltage

0.4

0.45

V

V

I

3, 7

V

OH

1

Output High Voltage

(TTL)

2.4

2.4

V

V

I

3, 7

V

OH

2

Output High Voltage

(CMOS)

0.85 V

CC

0.85 V

CC

V

V

I

4, 7

V

V

V

V

I

V

PPLK

V

Normal Operations

1.5

1.5

V

V

PPH

1

V

Block Erase, or Lock-

Bit Operations

3.0

3.6

V

V

PPH

2

V

Block Erase, or Lock-

Bit Operations

4.5

5.5

4.5

5.5

V

V

PPH

3

V

Block Erase, or Lock-

Bit Operations

11.4

12.6

11.4

12.6

V

V

LKO

V

2.0

2.0

V

V

HH

RP

11.4

12.6

11.4

12.6

V

Set Master Lock-Bit

Override Master and

Block Lock-Bit

8

NOTES:

1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds). Contact

SHARP’s Application Support Hotline or your local sales office for information about typical specifications.

3. Includes RY

PPH

PPH

PPH

PPH

PPH

7. Sampled, but not 100% tested.

8. Master lock-bit set operations are inhibited when RP

bit is set and RP