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LH28F008SC Datasheet(PDF) 23 Page - Sharp Corporation

Part # LH28F008SC
Description  8M (1M 횞 8) Flash Memory
PDF  38 Pages
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Manufacturer  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation

LH28F008SC Datasheet(HTML) 23 Page - Sharp Corporation

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8M (1M × 8) Flash Memory
LH28F008SC
23
DC CHARACTERISTICS
SYM.
PARAMETER
V
CC = 3.3 V
V
CC = 5 V
UNIT
TEST CONDITIONS
NOTE
TYP.
MAX.
TYP.
MAX.
I
LI
Input Load Current
±0.5
±1
µA
V
CC = VCC MAX., VIN = VCC or GND
1
I
LO
Output Leakage Current
±0.5
±10
µA
V
CC = VCC MAX., VOUT = VCC or GND
1
I
CCS
V
CC Standby Current
100
100
µA
CMOS Inputs, V
CC = VCC MAX.
CE
» = RP » = V
CC ±0.2 V
1, 3, 6
22
mA
TTL Inputs, V
CC = VCC MAX.
CE
» = RP » = V
IH
I
CCD
V
CC Deep Power-Down
Current
10
10
µA
RP
» = GND ±0.2 V I
OUT
(RY
»/BY») = 0 mA
1
I
CCR
V
CC Read Current
12
35
mA
CMOS Inputs V
CC = VCC MAX.,
CE
» = GND, f = 5 MHz (3.3 V),
f = 8 MHz (5 V), I
OUT = 0 mA
1, 5, 6
14
50
mA
TTL Inputs, V
CC = VCC MAX.,
CE
» = V
IH, f = 5 MHz (3.3 V),
f = 8 MHz, (5 V) I
OUT = 0 mA
I
CCW
V
CC Byte Write or Set
Lock-Bit Current
17
mA
V
PP = 3.3 V ±0.3 V
1, 7
17
35
mA
V
PP = 5.0 V ±10%
12
30
mA
V
PP = 12.0 V ± 5%
I
CCE
V
CC Block Erase or
Clear Block Lock-Bits
Current
17
mA
V
PP = 3.3 V ±0.3 V
1, 7
17
30
mA
V
PP = 5.0 V ±10%
12
25
mA
V
PP = 12.0 V ±5%
I
CCWS
I
CCES
V
CC Byte Write or
Block Erase Suspend
Current
610
mA
CE
» = V
IH
1, 2
I
PPS
I
PPR
V
PP Standby or Read
Current
±15
±15
µA
V
PP ≤ VCC
1
200
200
µA
V
PP > VCC
I
PPD
V
PP Deep Power-Down
Current
55
µA
RP
» = GND ± 0.2V
1
I
PPW
V
PP Byte Write or Set
Lock-Bit Current
40
mA
V
PP = 3.3 V ± 0.3 V
1, 7
40
40
mA
V
PP = 5.0 V ±10%
15
15
mA
V
PP = 12.0 V ±5%
I
PPE
V
PP Block Erase or
Clear Lock-Bit Current
20
mA
V
PP = 3.3 V ± 0.3 V
1, 7
20
20
mA
V
PP = 5.0 V ± 105
15
15
mA
V
PP = 12.0 V ±5%
I
PPWS
I
PPES
V
PP Byte Write or
Block Erase Suspend
Current
200
200
µA
V
PP = VPPH1/2/3
1



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